Inventor
Shirong Liao
Inventor
Mira Loma, CA, US
Overview
Patents· 14 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Fprimary
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation23%
G02BOptical elements, systems or apparatus20%
B82YSpecific uses or applications of nanostructures10%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein10%
H10HInorganic light-emitting semiconductor devices having potential barriers10%
H01LSemiconductor devices7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution7%
H10DInorganic electric semiconductor devices3%
Y02PClimate change mitigation technologies in the production or processing of goods3%
PatentTitleYear
9,377,581'Enhancing the performance of light sensors that receive light signals from an integrated waveguide'20169,087,951'Method and apparatus for diffusion into semiconductor materials'20159,052,464'Transfer of light signals between optical devices'20158,897,606'Ring resonator with wavelength selectivity'20148,842,946'Light sensor having reduced dark current'20148,796,749'Reverse conductive nano array and manufacturing method of the same'20148,737,772'Reducing optical loss in an optical modulator using depletion region'20148,639,065'System having avalanche effect light sensor with enhanced sensitivity'20148,542,954'Optical component having reduced dependency on etch depth'20138,515,214'Optical component having reduced dependency on etch depth'20138,093,080'Optical device having light sensor employing horizontal electrical field'20127,323,721'Monolithic multi-color, multi-quantum well semiconductor LED'20086,734,091'Electrode for p-type gallium nitride-based semiconductors'20046,479,313'Method of manufacturing GaN-based p-type compound semiconductors and light emitting diodes'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002Based in South Easton, MA, US· patent location history
2004Based in North Easton, MA, US· patent location history
2008Based in Diamond Bar, CA, US· patent location history
2012–2015Patents assigned to LIAO SHIRONG (9)· patent assignee history
2012–2014Patents assigned to ASGHARI MEHDI (3)· patent assignee history
2012–2016Based in Mira Loma, CA, US· patent location history
2013–2016Patents assigned to KOTURA INC (8)· patent assignee history
2013–2014Patents assigned to FENG DAZENG (5)· patent assignee history
2014Patents assigned to FENG NING-NING (3)· patent assignee history
2015Based in Eastvale, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| LIAO SHIRONGself | 9 | 2012–2015 |
| KOTURA INC | 8 | 2013–2016 |
| FENG DAZENG | 5 | 2013–2014 |
| ASGHARI MEHDI | 3 | 2012–2014 |
| FENG NING-NING | 3 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Mira Loma, California, US | 10 | 2012–2016 |
| Eastvale, California, US | 1 | 2015 |
| Diamond Bar, California, US | 1 | 2008 |
| North Easton, Massachusetts, US | 1 | 2004 |
| South Easton, Massachusetts, US | 1 | 2002 |