Inventor

Juergen Faul

Inventor

Radebeul, DE

Overview

1999–2020

Patent span

Electricity

Primary field (CPC H)

Patents· 27 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices32%

H01LSemiconductor devices22%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%

H10BElectronic memory devices11%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%

B81BMicrostructural devices or systems, e.g. micromechanical devices1%

B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems1%

G01LMeasuring force, stress, torque, work, mechanical power, mechanical efficiency, or fluid pressure1%

PatentTitleYear

10,535,674Method of forming a semiconductor device structure and semiconductor device structure2020 10,466,126MEMS capacitive pressure sensors in fully depleted semiconductor on insulator (FDSOI)2019 10,224,342Tunable capacitor for FDSOI applications2019 10,032,891FinFET based flash memory cell2018 10,026,753Method for compensating for temperature effects in semiconductor device structures using a diode structure and a tunable resistor2018 9,917,087'Integrated circuits with a partially-depleted region formed over a bulk silicon substrate and methods for fabricating the same'2018 9,905,707'MOS capacitive structure of reduced capacitance variability'2018 9,876,111Method of forming a semiconductor device structure using differing spacer widths and the resulting semiconductor device structure2018 9,837,439Compensation of temperature effects in semiconductor device structures2017 9,748,259'Method of forming a semiconductor device structure and semiconductor device structure'2017 9,748,270'Tunable capacitor for FDSOI applications'2017 9,666,589'FinFET based flash memory cell'2017 9,299,616'Integrated circuits with separate workfunction material layers and methods for fabricating the same'2016 9,177,803'HK/MG process flows for P-type semiconductor devices'2015 9,093,526'Methods of forming a sidewall spacer having a generally triangular shape and a semiconductor device having such a spacer'2015 9,064,733'Contact structure for a semiconductor device and methods of making same'2015 9,023,715'Methods of forming bulk FinFET devices so as to reduce punch through leakage currents'2015 8,962,414'Reduced spacer thickness in semiconductor device fabrication'2015 8,956,928'Contact structure for a semiconductor device and methods of making same'2015 8,951,920'Contact landing pads for a semiconductor device and methods of making same'2015 8,823,149'Contact landing pads for a semiconductor device and methods of making same'2014 8,614,134'Shallow source and drain architecture in an active region of a semiconductor device having a pronounced surface topography by tilted implantation'2013 7,915,713'Field effect transistors with channels oriented to different crystal planes'2011 7,700,983'Transistor, memory cell, memory cell array and method of forming a memory cell array'2010 6,022,796'Geometrical control of device corner threshold'2000 5,998,852'Geometrical control of device corner threshold'1999 5,858,866'Geometrical control of device corner threshold'1999

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999–2000Patents assigned to IBM (3)· patent assignee history

1999–2000Patents assigned to SIEMENS AG (2)· patent assignee history

1999–2000Based in Wappingers Falls, NY, US· patent location history

2010–2011Patents assigned to QIMONDA AG (2)· patent assignee history

2010–2020Based in Radebeul, DE· patent location history

2013–2020Patents assigned to GLOBALFOUNDRIES INC (22)· patent assignee history

2013–2015Patents assigned to FAUL JUERGEN (2)· patent assignee history

2013–2019Based in Dresden, DE· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
GLOBALFOUNDRIES INC	22	2013–2020
IBM	3	1999–2000
FAUL JUERGENself	2	2013–2015
QIMONDA AG	2	2010–2011
SIEMENS AG	2	1999–2000

Locations

Location	Patents	Span
Radebeul, DE	20	2010–2020
Dresden, DE	4	2013–2019
Wappingers Falls, New York, US	3	1999–2000