Inventor
PATRICK ROBERT KHAYAT
Inventor
US
Overview
Patents· 43 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores46%
G06FElectric digital data processing33%
G06NComputing arrangements based on specific computational models12%
H03MCoding6%
G06KGraphical data reading3%
PatentTitleYear
12,537,064Read soft bits through boosted modulation following reading hard bits202612,512,857Classification of error rate of data retrieved from memory cells202512,488,839Search for an optimized read voltage202512,354,670Dynamic adjustment of offset voltages for reading memory cells in a memory device202512,217,803Determine optimized read voltage via identification of distribution shape of signal and noise characteristics202512,073,899Track charge loss based on signal and noise characteristics of memory cells collected in calibration operations202412,046,296Reading of soft bits and hard bits from memory cells202412,009,040Detection of an incorrectly located read voltage202412,009,034Classification of error rate of data retrieved from memory cells202411,984,172Read disturb mitigation based on signal and noise characteristics of memory cells collected for read calibration202411,886,718Descrambling of scrambled linear codewords using non-linear scramblers202411,875,846Optimization of soft bit windows based on signal and noise characteristics of memory cells202411,775,217Adaptive and/or iterative operations in executing a read command to retrieve data from memory cells202311,762,599Self adapting iterative read calibration to retrieve data from memory cells202311,740,970Dynamic adjustment of data integrity operations of a memory system based on error rate classification202311,726,719Compound feature generation in classification of error rate of data retrieved from memory cells202311,676,666Read disturb scan for unprogrammed wordlines202311,670,396Determine bit error count based on signal and noise characteristics centered at an optimized read voltage202311,662,905Memory system performance enhancements using measured signal and noise characteristics of memory cells202311,657,886Intelligent proactive responses to operations to read data from memory cells202311,587,624Coarse calibration based on signal and noise characteristics of memory cells collected in prior calibration operations202311,587,638Read model of memory cells using information generated during read operations202311,581,047Iterative read calibration enhanced according to patterns of shifts in read voltages202311,562,801Determine signal and noise characteristics centered at an optimized read voltage202311,562,793Read soft bits through boosted modulation following reading hard bits202311,557,361Compute an optimized read voltage202311,514,989Dynamic adjustment of offset voltages for reading memory cells in a memory device202211,474,748Compound feature generation in classification of error rate of data retrieved from memory cells202211,468,959Detection of an incorrectly located read voltage202211,403,042Self adapting iterative read calibration to retrieve data from memory cells202211,355,203Determine optimized read voltage via identification of distribution shape of signal and noise characteristics202211,276,473Coarse calibration based on signal and noise characteristics of memory cells collected in prior calibration operations202211,275,515Descrambling of scrambled linear codewords using non-linear scramblers202211,257,546Reading of soft bits and hard bits from memory cells202211,244,729Search for an optimized read voltage202211,237,726Memory system performance enhancements using measured signal and noise characteristics of memory cells202211,238,953Determine bit error count based on signal and noise characteristics centered at an optimized read voltage202211,227,666Track charge loss based on signal and noise characteristics of memory cells collected in calibration operations202211,221,800Adaptive and/or iterative operations in executing a read command to retrieve data from memory cells202211,205,495Read disturb mitigation based on signal and noise characteristics of memory cells collected for read calibration202111,200,959Optimization of soft bit windows based on signal and noise characteristics of memory cells202111,177,013Determine signal and noise characteristics centered at an optimized read voltage202111,152,073Iterative read calibration enhanced according to patterns of shifts in read voltages2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to MICRON TECHNOLOGY INC (43)· patent assignee history
2021–2026Based in US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MICRON TECHNOLOGY INC | 43 | 2021–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 43 | 2021–2026 |