Inventor

JOHN J. PEKARIK

Inventor
US

Overview

37→
Patents
2021–2026
Patent span
Electricity
Primary field (CPC H)

Patents· 37 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices34%
H01LSemiconductor devices32%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
H10BElectronic memory devices3%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%
H10NElectric solid-state devices not otherwise provided for3%
G01KMeasuring temperature1%
G01NInvestigating or analysing materials by determining their chemical or physical properties1%
G02BOptical elements, systems or apparatus1%
PatentTitleYear
12,588,282Integrated structure with trap rich regions and low resistivity regions202612,520,507Structures for a vertical varactor diode and related methods202612,471,294Array arrangements of vertical bipolar junction transistors202512,464,745Bipolar junction transistor arrays202512,396,221Junction field-effect transistors202512,336,206Heterojunction bipolar transistors with a cut stress liner202512,327,776Heat sink for face bonded semiconductor device202512,324,227Heterojunction bipolar transistor with buried trap rich isolation region202512,142,673Transistor with wrap-around extrinsic base202412,107,124Bipolar transistors202411,862,717Lateral bipolar transistor structure with superlattice layer and method to form same202411,855,195Transistor with wrap-around extrinsic base202311,855,196Transistor with wrap-around extrinsic base202311,848,192Heterojunction bipolar transistor with emitter base junction oxide interface202311,791,334Heterojunction bipolar transistor with buried trap rich isolation region202311,784,224Lateral bipolar transistor structure with base over semiconductor buffer and related method202311,749,747Bipolar transistor structure with collector on polycrystalline isolation layer and methods to form same202311,749,599Dual thickness fuse structures202311,695,064Bipolar junction transistors with a wraparound base layer202311,646,348Double mesa heterojunction bipolar transistor202311,639,895Device including optofluidic sensor with integrated photodiode202311,637,068Thermally and electrically conductive interconnects202311,637,181Lateral bipolar transistors with polysilicon terminals202311,569,405Photodetectors with a lateral composition gradient202311,469,178Metal-free fuse structures202211,374,092Virtual bulk in semiconductor on insulator technology202211,333,558Boolean temperature sensing using phase transition material202211,296,190Field effect transistors with back gate contact and buried high resistivity layer202211,282,883Trench-based photodiodes202211,271,077Trap-rich layer in a high-resistivity semiconductor layer202211,271,079Wafer with crystalline silicon and trap rich polysilicon layer202211,264,499Transistor devices with source/drain regions comprising an interface layer that comprises a non-semiconductor material202211,217,685Heterojunction bipolar transistor with marker layer202211,195,925Heterojunction bipolar transistors202111,177,347Heterojunction bipolar transistor202111,158,722Transistors with lattice structure202111,145,725Heterojunction bipolar transistor2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to GLOBALFOUNDRIES US INC (30)· patent assignee history
2021–2026Based in US· patent location history
2023–2025Patents assigned to GLOBALFOUNDRIES SG PTE LTD (6)· patent assignee history
2023Patents assigned to GLOBALFOUNDRIES INC (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
GLOBALFOUNDRIES US INC302021–2026
GLOBALFOUNDRIES SG PTE LTD62023–2025
GLOBALFOUNDRIES INC12023
Locations
LocationPatentsSpan
US372021–2026