Inventor
NANBO GONG
Inventor
US
Overview
Patents· 41 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores21%
H10BElectronic memory devices19%
H10NElectric solid-state devices not otherwise provided for16%
H01LSemiconductor devices13%
G06NComputing arrangements based on specific computational models8%
H10DInorganic electric semiconductor devices7%
G06FElectric digital data processing3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
H03KPulse technique3%
H04LTransmission of digital information, e.g. telegraphic communication2%
PatentTitleYear
12,575,110Localized anneal of ferroelectric dielectric202612,484,235Solid-state switch202512,396,376Piezoelectric memory202512,364,174Global heater for phase change memory202512,272,657RRAM filament location for physically unclonable function202512,150,392Transfer length phase change material (PCM) based bridge cell202412,099,616Physically unclonable function based on a phase change material array202412,058,943Phase-change material-based XOR logic gates202412,026,605FeFET unit cells for neuromorphic computing202411,948,618Non-volatile analog resistive memory cells implementing ferroelectric select transistors202411,942,388Temperature-assisted device with integrated thin-film heater202411,929,404Transistor gates having embedded metal-insulator-metal capacitors202411,923,458FeFET with double gate structure202411,915,751Nonvolatile phase change material logic device202411,910,734Phase change memory cell with ovonic threshold switch202411,864,474ReRAM analog PUF using filament location202411,856,798Resistive random-access memory random number generator202311,844,293Physical unclonable function device with phase change202311,818,886Low program voltage flash memory cells with embedded heater in the control gate202311,818,971PCM cell with resistance drift correction202311,805,714Phase change memory with conductive bridge filament202311,805,713Drift mitigation for resistive memory devices202311,790,243Ferroelectric field effect transistor for implementation of decision tree202311,727,977Non-volatile analog resistive memory cells implementing ferroelectric select transistors202311,688,457Using ferroelectric field-effect transistors (FeFETs) as capacitive processing units for in-memory computing202311,665,983Phase change memory cell with ovonic threshold switch202311,653,578Phase-change material-based XOR logic gates202311,647,684Nonvolatile tunable capacitive processing unit202311,631,809In-memory resistive random access memory XOR logic using complimentary switching202311,631,462Temperature assisted programming of flash memory for neuromorphic computing202311,563,173PCM cell with resistance drift correction202311,557,342Multi-level cell threshold voltage operation of one-selector-one-resistor structure included in a crossbar array202311,456,308Low-voltage flash memory integrated with a vertical field effect transistor202211,437,102Memory erasure using proximity heaters202211,430,510Multi-level ferroelectric field-effect transistor devices202211,322,202Semiconductor logic circuits including a non-volatile memory cell202211,302,810Ferroelectric field effect transistor with nanowire core202211,232,824Non-volatile analog resistive memory cells implementing ferroelectric select transistors202211,177,225Semiconductor device including physical unclonable function202111,145,814Phase change memory with conductive bridge filament202111,139,025Multi-level cell threshold voltage operation of one-selector-one-resistor structure included in a crossbar array2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to IBM (41)· patent assignee history
2021–2023Patents assigned to MACRONIX INT CO LTD (2)· patent assignee history
2021–2026Based in US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 41 | 2021–2026 |
| MACRONIX INT CO LTD | 2 | 2021–2023 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 41 | 2021–2026 |