Inventor

HUICHENG CHANG

Inventor

TW

Overview

2021–2026

Patent span

Electricity

Primary field (CPC H)

Patents· 147 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary

H01LSemiconductor devices27%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%

H10DInorganic electric semiconductor devices21%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1018%

B82YSpecific uses or applications of nanostructures5%

G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices2%

H01JElectric discharge tubes or discharge lamps2%

B23KSoldering or unsoldering1%

G06TImage data processing or generation, in general0%

H10BElectronic memory devices0%

PatentTitleYear

12,563,997Warm wafer after ion cryo-implantation2026 12,557,623Semiconductor device with connecting structure having a doped layer and method for forming the same2026 12,557,602Wafer positioning method and apparatus2026 12,557,612Bonding system with sealing gasket and method for using the same2026 12,538,567Semiconductor structure2026 12,527,070Method for forming wells for semiconductor devices using implanations of increasing energy2026 12,527,019Method of manufacturing semiconductor devices having metal gate structure and semiconductor devices2026 12,501,647Semiconductor device and method of manufacture2025 12,489,002Annealing apparatus and method of operating the same2025 12,484,240Semiconductor device and methods of forming the same2025 12,477,764Method of manufacturing a source/drain of a semiconductor device using multiple implantation processes2025 12,469,742Shallow trench isolation forming method and structures resulting therefrom2025 12,451,390Trench filling through reflowing filling material2025 12,438,031Bonding system and method for using the same2025 12,432,963Device having an air gap adjacent to a contact plug and covered by a doped dielectric layer2025 12,426,300Transistor source/drain contacts and methods of forming the same2025 12,419,100Transistor isolation regions and methods of forming the same2025 12,419,099Method for manufacturing semiconductor device2025 12,414,338Nanostructure FET and method of forming same2025 12,406,938Methods of forming alignment structure with trenches for semiconductor devices2025 12,400,910Method for forming semiconductor device with monoclinic crystalline metal oxide capping layer2025 12,399,067Apparatus, system, and method for measuring the temperature of a substrate2025 12,374,519Wafer positioning method and apparatus2025 12,368,018Method for ion implantation uniformity control2025 12,369,394Semiconductor device and method of forming same2025 12,368,098Methods of forming semiconductor device2025 12,368,129Temperature controllable bonder equipment for substrate bonding2025 12,347,696Laser de-bonding carriers and composite carriers thereof2025 12,347,681Method of forming a semiconductor device2025 12,336,249Gate spacer and formation method thereof2025 12,328,938Gate structures for stacked semiconductor devices2025 12,327,811Ion implantation with annealing for substrate cutting2025 12,315,753Wafer positioning method and apparatus2025 12,317,551Semiconductor devices including backside power rails and methods of manufacture2025 12,300,496Deposition window enlargement2025 12,300,740Metal layer protection during wet etching2025 12,300,717Semiconductor device and method of manufacture2025 12,293,924Ion exposure method and apparatus2025 12,283,515Method and device to reduce epitaxial defects due to contact stress upon a semicondcutor wafer2025 12,278,141Semiconductor devices and methods of manufacture2025 12,266,574Flowable chemical vapor deposition (FCVD) using multi-step anneal treatment and devices thereof2025 12,255,101Ion implantation of nanostructures for nano-FET2025 12,255,171Wafer bonding system and method of using the same2025 12,249,592Dynamic bonding gap control and tool for wafer bonding2025 12,237,211Bonding system with sealing gasket and method for using the same2025 12,230,532Semiconductor device, method of manufacture by monitoring relative humidity, and system of manufacture thereof2025 12,224,327Semiconductor device and method2025 12,218,196Semiconductor device and method of manufacture2025 12,211,820Wafer bonding apparatus and method2025 12,211,901Semiconductor device having a doped fin well2025 12,205,994Sacrificial layer for semiconductor process2025 12,198,931Ion implantation method for reducing roughness of patterned resist lines2025 12,199,156Contact formation with reduced dopant loss and increased dimensions2025 12,191,174Semiconductor processing tool and method of using an embedded chamber2025 12,183,632Bottom lateral expansion of contact plugs through implantation2024 12,183,581Method of forming a semiconductor device by driving hydrogen into a dielectric layer from another dielectric layer2024 12,165,888Method and system for bonding2024 12,154,949Transistor contacts and methods of forming the same2024 12,153,350Method of manufacturing semiconductor devices2024 12,112,977Reducing spacing between conductive features through implantation2024 12,107,086Field effect transistor contact with reduced contact resistance2024 12,100,738Semiconductor device with implant and method of manufacturing same2024 12,087,592Ambient controlled two-step thermal treatment for spin-on coating layer planarization2024 12,087,847Variable size fin structures2024 12,087,578Semiconductor structure and method of forming the same2024 12,074,068Epitaxial structures for stacked semiconductor devices2024 12,068,195Metal loss prevention using implantation2024 12,062,709Gate spacer structure and method of forming same2024 12,040,382Method of forming a nano-FET semiconductor device2024 12,021,082Enhanced channel strain to reduce contact resistance in NMOS FET devices2024 12,015,055Doping for semiconductor device with conductive feature2024 12,009,305Semiconductor device and method for forming the same2024 11,996,412Semiconductor device and method of forming same2024 11,996,317Methods for forming isolation regions by depositing and oxidizing a silicon liner2024 11,990,404Heat dissipation for semiconductor devices and methods of manufacture2024 11,984,322Semiconductor device and manufacturing method thereof2024 11,984,491Metal layer protection during wet etching2024 11,978,634Reduce well dopant loss in FinFETs through co-implantation2024 11,978,677Wafer positioning method and apparatus2024 11,978,676Semiconductor structure and method of forming the same2024 11,973,027Semiconductor device and methods of forming the same2024 11,955,553Source/drain structure2024 11,935,793Dual dopant source/drain regions and methods of forming same2024 11,915,942Ion exposure method and apparatus2024 11,908,751Transistor isolation regions and methods of forming the same2024 11,908,740Semiconductor structure with doped via plug2024 11,908,708Laser de-bonding carriers and composite carriers thereof2024 11,901,218Shallow trench isolation forming method and structures resulting therefrom2024 11,901,189Ambient controlled two-step thermal treatment for spin-on coating layer planarization2024 11,901,455Method of manufacturing a FinFET by implanting a dielectric with a dopant2024 11,901,235Ion implantation for nano-FET2024 11,862,694Semiconductor device and method2024 11,854,853Wafer positioning method and apparatus2023 11,855,146Melt anneal source and drain regions2023 11,855,040Ion implantation with annealing for substrate cutting2023 11,848,361Sacrificial layer for semiconductor process2023 11,842,933Semiconductor device and method2023 11,798,985Methods for manufacturing isolation layers in stacked transistor structures2023 11,796,922Method of manufacturing semiconductor devices2023 11,791,204Semiconductor device with connecting structure having a doped layer and method for forming the same2023 11,776,810Method of forming a semiconductor device2023 11,776,960Gate structures for stacked semiconductor devices2023 11,776,814Method of forming semiconductor device by driving hydrogen into a dielectric layer from another dielectric layer2023 11,742,210Deposition window enlargement2023 11,742,386Doping for semiconductor device with conductive feature2023 11,710,659Metal loss prevention using implantation2023 11,705,505Gate spacer structure and method of forming same2023 11,699,621Method for patterning a lanthanum containing layer2023 11,695,042Transistor contacts and methods of forming the same2023 11,670,683Semiconductor device with implant and method of manufacturing same2023 11,652,053Semiconductor device and method for forming the same2023 11,646,377Semiconductor device and method of manufacture2023 11,640,986Implantation and annealing for semiconductor device2023 11,615,982Reducing spacing between conductive features through implantation2023 11,610,885Method for forming semiconductor structure2023 11,605,635Semiconductor device and method of forming same2023 11,605,555Trench filling through reflowing filling material2023 11,594,636Source/drain structure2023 11,594,618FinFET devices and methods of forming2023 11,574,907Enhanced channel strain to reduce contact resistance in NMOS FET devices2023 11,563,110Semiconductor structure and method for forming the same2023 11,532,516Melting laser anneal of epitaxy regions2022 11,532,485Process for making multi-gate transistors and resulting structures2022 11,515,206Semiconductor structure with doped via plug2022 11,508,831Gate spacer structure and method of forming same2022 11,502,000Bottom lateral expansion of contact plugs through implantation2022 11,456,383Semiconductor device having a contact plug with an air gap spacer2022 11,450,565Ion implant process for defect elimination in metal layer planarization2022 11,450,743Method of forming a semiconductor device with implantation of impurities at high temperature2022 11,450,757FinFET device and methods of forming2022 11,450,741Doping for semiconductor device with conductive feature2022 11,444,028Contact structure and formation thereof2022 11,393,695Ion exposure method and apparatus2022 11,380,782Variable size fin structures2022 11,367,621Semiconductor device and manufacturing method thereof2022 11,348,835Ion implantation for nano-FET2022 11,348,792Reduce well dopant loss in FinFETs through co-implantation2022 11,302,567Shallow trench isolation forming method and structures resulting therefrom2022 11,289,417Semiconductor device and methods of forming the same2022 11,289,482Field effect transistor contact with reduced contact resistance2022 11,257,911Sacrificial layer for semiconductor process2022 11,257,952Source/drain structure2022 11,245,033Semiconductor devices with core-shell structures2022 11,227,918Melt anneal source and drain regions2022 11,211,289Metal loss prevention using implantation2021 11,211,465Semiconductor device having gate dielectric and inhibitor film over gate dielectric2021 11,145,751Semiconductor structure with doped contact plug and method for forming the same2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (147)· patent assignee history

2021–2026Based in TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	147	2021–2026

Locations

Location	Patents	Span
TW	147	2021–2026