Inventor

Jin Heong Yim

Inventor

Daejeon, KR

Overview

23→

Patents

2001–2011

Patent span

Chemistry

Primary field (CPC C)

Patents· 23 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%

C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds12%

Y10TTechnical subjects covered by former us classification9%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%

B82YSpecific uses or applications of nanostructures6%

C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium6%

C08FMacromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds6%

C08LCompositions of macromolecular compounds6%

H10NElectric solid-state devices not otherwise provided for6%

C09DCoating compositions, e.g. paints, varnishes or lacquers4%

PatentTitleYear

8,053,173'Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer'2011 7,872,250'Phase-change ram and method for fabricating the same'2011 7,750,176'Multi-functional cyclic siloxane compound and process for preparing dielectric film by using siloxane-based polymer prepared from the compound'2010 7,612,358'Nonvolatile nanochannel memory device using mesoporous material'2009 7,582,718'Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer'2009 7,576,230'Multi-functional cyclic siloxane compound, a siloxane-based polymer prepared from the compound and a process for preparing a dielectric film by using the polymer'2009 7,541,633'Phase-change RAM and method for fabricating the same'2009 7,539,038'Nonvolatile nanochannel memory device using organic-inorganic complex mesoporous material'2009 7,517,917'Composition for preparing nanoporous material comprising calixarene derivative'2009 7,459,549'Composition for preparing nanoporous material'2008 7,169,477'Composition for preparing porous dielectric thin films'2007 7,144,453'Composition for preparing porous dielectric thin film containing saccharides porogen'2006 7,108,922'Siloxane-based resin and interlayer insulating film formed using the same'2006 7,019,099'Siloxane-based resin and method for forming insulating film between interconnect layers in semiconductor devices by using the same'2006 7,014,917'Siloxane-based resin and interlayer insulating film for a semiconductor device made using the same'2006 6,995,218'Metallocene catalysts for olefin or styrene polymerization and polymerization method using the metallocene catalysts'2006 6,869,864'Method for producing quantum dot silicate thin film for light emitting device'2005 6,706,827'Metallocene catalysts for olefin or styrene polymerization and polymerization method using the metallocene catalysts'2004 6,660,822'Method for forming insulating film between interconnect layers in microelectronic devices'2003 6,632,748'Composition for preparing substances having nano-pores'2003 6,623,711'Siloxane-based resin and method for forming insulating film between interconnect layers in semiconductor devices by using the same'2003 6,489,425'Styrene/macromonomer random polymer having excellent melt flowability and impact strength and method of preparing the same'2002 6,284,700'Metallocene catalysts for olefin or styrene polymerization and polymerization method using the metallocene catalysts'2001

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2001–2006Patents assigned to SAMSUNG GENERAL CHEMICALS CO (2)· patent assignee history

2001–2006Based in Taejeon, KR· patent location history

2002–2011Patents assigned to SAMSUNG ELECTRONICS CO LTD (18)· patent assignee history

2003–2006Based in Kumi-shi, KR· patent location history

2004Patents assigned to SAMSUNG ATOFINA CO LTD (1)· patent assignee history

2005–2011Based in Daejeon, KR· patent location history

2008–2009Patents assigned to SAMSUNG CORNING CO LTD (2)· patent assignee history

2008–2011Based in Suwon-si, KR· patent location history

2009–2010Based in Gyeonggi-do, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SAMSUNG ELECTRONICS CO LTD	18	2002–2011
SAMSUNG CORNING CO LTD	2	2008–2009
SAMSUNG GENERAL CHEMICALS CO	2	2001–2006
SAMSUNG ATOFINA CO LTD	1	2004

Locations

Location	Patents	Span
Daejeon, KR	7	2005–2011
Suwon-si, KR	6	2008–2011
Kumi-shi, KR	4	2003–2006
Taejeon, KR	4	2001–2006
Gyeonggi-do, KR	2	2009–2010