Inventor
Jin Ho Oh
Inventor
Seongnam-si, KR
Overview
Patents· 16 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices19%
H10NElectric solid-state devices not otherwise provided for19%
H01LSemiconductor devices11%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein8%
G11CStatic stores8%
H10DInorganic electric semiconductor devices5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
B60GVehicle suspension arrangements3%
G01NInvestigating or analysing materials by determining their chemical or physical properties3%
G02BOptical elements, systems or apparatus3%
PatentTitleYear
10,699,661Display panel and a display apparatus having the same with modified shield electrode202010,409,123Liquid crystal display preventing contrast ratio reduction201910,103,152Semiconductor device and method for fabricating the same20189,417,377'Display device'20169,383,371'Method of sequential and multiple immunostaining for detection of various antigens in the same specimens'20169,368,518'Thin film transistor array panel and method for manufacturing the same'20168,962,438'Variable resistance memory device and method of forming the same'20158,865,558'Method of forming a phase change material layer pattern and method of manufacturing a phase change memory device'20148,778,728'Methods of manufacturing non-volatile phase-change memory devices'20148,557,627'Methods of forming a phase change layer and methods of fabricating a phase change memory device including the same'20138,552,412'Variable resistance memory device and method of forming the same'20138,452,025'Power supply circuit including voltage regulator and headphone driving circuit employing the same'20138,308,175'Tubular torsion beam for rear suspensions of vehicles and manufacturing method thereof'20128,299,450'Non-volatile memory device including phase-change material'20128,222,625'Non-volatile memory device including phase-change material'20127,719,321'Short pulse rejection circuit and method thereof'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2018Patents assigned to SAMSUNG ELECTRONICS CO LTD (10)· patent assignee history
2010–2013Based in Yongin-si, KR· patent location history
2012–2014Patents assigned to OH JIN-HO (5)· patent assignee history
2012–2014Patents assigned to AHN DONG-HO (3)· patent assignee history
2012–2013Patents assigned to HORII HIDEKI (3)· patent assignee history
2012–2018Based in Seongnam-si, KR· patent location history
2014Based in Gyeonggi-do, KR· patent location history
2016–2020Patents assigned to SAMSUNG DISPLAY CO LTD (4)· patent assignee history
2016Based in Seoul, KR· patent location history
2019–2020Based in Suwon-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 10 | 2010–2018 |
| OH JIN-HOself | 5 | 2012–2014 |
| SAMSUNG DISPLAY CO LTD | 4 | 2016–2020 |
| AHN DONG-HO | 3 | 2012–2014 |
| HORII HIDEKI | 3 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Seongnam-si, KR | 7 | 2012–2018 |
| Seoul, KR | 3 | 2016 |
| Suwon-si, KR | 2 | 2019–2020 |
| Yongin-si, KR | 2 | 2010–2013 |
| Gyeonggi-do, KR | 1 | 2014 |