Inventor
Baoyou Chen
Inventor
Hubei, CN
Overview
Patents· 5 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices33%
H10BElectronic memory devices33%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
H10DInorganic electric semiconductor devices8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
PatentTitleYear
10,847,532Joint opening structures of three-dimensional memory devices and methods for forming the same202010,804,283Openings layout of three-dimensional memory device202010,790,295Staircase formation in three-dimensional memory device202010,790,297Method for forming channel hole in three-dimensional memory device using nonconformal sacrificial layer202010,553,604Through array contact structure of three-dimensional memory device2020Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2020Patents assigned to YANGTZE MEMORY TECH CO LTD (4)· patent assignee history
2020Based in Hubei, CN· patent location history
2020Based in Wuhan, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| YANGTZE MEMORY TECH CO LTD | 4 | 2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hubei, CN | 4 | 2020 |
| Wuhan, CN | 1 | 2020 |