Inventor
YEN-CHIEH HUANG
Inventor
TW
Overview
Patents· 33 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices29%
H01LSemiconductor devices27%
H10BElectronic memory devices15%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light3%
B82YSpecific uses or applications of nanostructures2%
F16LPipes1%
G01LMeasuring force, stress, torque, work, mechanical power, mechanical efficiency, or fluid pressure1%
G01NInvestigating or analysing materials by determining their chemical or physical properties1%
PatentTitleYear
12,550,383Double gate ferroelectric field effect transistor devices and methods for forming the same202612,543,560Semiconductor structure202612,493,225Single-material-double-process parametric laser-wavelength converter202512,402,379Epitaxial layer under a gate structure of a transistor202512,382,640Memory device and method for fabricating the same202512,363,912Ferroelectric memory device with a metal layer having a crystal orientation for improving ferroelectric polarization and method for forming the ferroelectric memory device202512,167,609Semiconductor structure and method of forming the same202412,150,309Double gate metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMIS-FET) structure202412,144,259Organic gate TFT-type stress sensors and method of making and using the same202412,136,673Semiconductor device with self-aligned wavy contact profile and method of forming the same202412,131,943Semiconductor structure having epitaxial structure202412,119,402Semiconductor devices with ferroelectric layer and methods of manufacturing thereof202412,087,811Three dimensional metal insulator metal capacitor structure202412,089,415Metal layers for increasing polarization of ferroelectric memory device202412,078,607Wide-bandgap semiconductor layer characterization202412,027,601Method for forming semiconductor structure202412,015,236Dielectric-grating-waveguide free-electron laser202411,929,593Laser pumping device and system including geometric light concentrator and thermal insulator202411,917,144Efficient in-loop filtering for video coding202411,908,936Double gate ferroelectric field effect transistor devices and methods for forming the same202411,901,415Transistor isolation structures202411,903,217Ferroelectric memory device with a metal layer having a crystal orientation for improving ferroelectric polarization and method for forming the ferroelectric memory device202411,824,121Semiconductor device with self-aligned wavy contact profile and method of forming the same202311,817,498Ferroelectric field effect transistor devices and methods for forming the same202311,810,956In-situ thermal annealing of electrode to form seed layer for improving FeRAM performance202311,777,010Semiconductor structure and method for forming the same202311,756,824Semiconductor structure having epitaxial structure202311,735,471Semiconductor structure and method for forming the same202311,670,715Semiconductor devices with ferroelectric layer and methods of manufacturing thereof202311,616,142Semiconductor device with self-aligned wavy contact profile and method of forming the same202311,527,649Ferroelectric field effect transistor devices and methods for forming the same202211,450,733Three dimensional metal insulator metal capacitor structure202211,195,951Semiconductor device with self-aligned wavy contact profile and method of forming the same2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (29)· patent assignee history
2021–2026Based in TW· patent location history
2024Patents assigned to UNIV NAT TSING HUA (2)· patent assignee history
2024Patents assigned to MEDIATEK INC (1)· patent assignee history
2025Patents assigned to LEDLAS CORP (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 29 | 2021–2026 |
| UNIV NAT TSING HUA | 2 | 2024 |
| LEDLAS CORP | 1 | 2025 |
| MEDIATEK INC | 1 | 2024 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 33 | 2021–2026 |