Inventor
Tung-Yang Lin
Inventor
New Taipei, TW
Overview
Patents· 10 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices40%
H10DInorganic electric semiconductor devices40%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
PatentTitleYear
10,038,090Power MOSFETs and methods for forming the same201810,014,288Ultra high voltage electrostatic discharge protection device with current gain20189,865,748'Semiconductor structure and method for manufacturing the same'20189,627,551'Ultrahigh-voltage semiconductor structure and method for manufacturing the same'20179,601,616'Power MOSFETs and methods for forming the same'20179,431,531'Semiconductor device having drain side contact through buried oxide'20169,412,863'Enhanced breakdown voltages for high voltage MOSFETS'20169,379,179'Ultra high voltage electrostatic discharge protection device with current gain'20169,356,139'Power MOSFETs and methods for forming the same'20169,000,517'Power MOSFETs and methods for forming the same'2015Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2015–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (3)· patent assignee history
2015–2018Based in New Taipei, TW· patent location history
2016–2018Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (7)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 7 | 2016–2018 |
| TAIWAN SEMICONDUCTOR MFG | 3 | 2015–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| New Taipei, TW | 10 | 2015–2018 |