Inventor

Theodore I. Kamins

Inventor

Palo Alto, CA, US

Overview

109→

Patents

1978–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 109 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

B82Yprimary

B82YSpecific uses or applications of nanostructures15%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests10%

H10DInorganic electric semiconductor devices9%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%

G01NInvestigating or analysing materials by determining their chemical or physical properties6%

G02BOptical elements, systems or apparatus5%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation4%

G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein4%

Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution3%

PatentTitleYear

10,910,166Printable composition for an ionic gel separation layer for energy storage devices2021 10,573,468Printable ionic gel separation layer for energy storage devices2020 10,121,608Printable ionic gel separation layer for energy storage devices2018 9,972,450Diatomaceous ionic gel separation layer for energy storage devices and printable composition therefor2018 9,972,449Printable composition for an ionic gel separation layer for energy storage devices2018 9,354,363'Controlling phase response in a sub-wavelength grating lens'2016 9,123,705'Conductive ink for filling vias'2015 9,048,031'Method of and printable compositions for manufacturing a multilayer carbon nanotube capacitor'2015 9,035,174'Forming graded index lens in an all atmospheric pressure printing process to form photovoltaic panels'2015 8,940,627'Conductive ink for filling vias'2015 8,927,346'Electrically and/or thermally actuated device'2015 8,787,064'Programmable bipolar electronic device'2014 8,569,900'Nanowire sensor with angled segments that are differently functionalized'2013 8,436,330'Electrically actuated devices'2013 8,389,388'Photonic device and method of making the same'2013 8,268,720'Method of positioning catalyst nanoparticle and nanowire-based device employing same'2012 8,258,050'Method of making light trapping crystalline structures'2012 8,223,331'Signal-amplification device for surface enhanced raman spectroscopy'2012 8,203,137'Photonic structure'2012 8,198,706'Multi-level nanowire structure and method of making the same'2012 8,154,127'Optical device and method of making the same'2012 8,148,800'Nanowire-based semiconductor device and method employing removal of residual carriers'2012 8,101,473'Rounded three-dimensional germanium active channel for transistors and sensors'2012 8,059,922'Methods of manipulating optical energy within a waveguide'2011 8,053,982'Light-emitting diodes with carrier extraction electrodes'2011 8,054,461'Systems for performing Raman spectroscopy'2011 8,043,687'Structure including a graphene layer and method for forming the same'2011 8,039,845'Methods for coupling diamond structures to photonic devices'2011 8,030,729'Device for absorbing or emitting light and methods of making the same'2011 7,989,841'Fast injection optical switch'2011 7,983,519'Photonic connection and method for enhancing alignment accuracy thereof'2011 7,964,927'Semiconductor device and method for strain controlled optical absorption'2011 7,928,568'Nanowire-based device having isolated electrode pair'2011 7,924,413'Nanowire-based photonic devices'2011 7,922,927'Method of forming one or more nanopores for aligning molecules for molecular electronics'2011 7,910,915'Nanowire devices and systems, light-emitting nanowires, and methods of precisely positioning nanoparticles'2011 7,880,318'Sensing system and method of making the same'2011 7,875,480'Sensor and method for making the same'2011 7,872,318'Sensing devices and methods for forming the same'2011 7,863,625'Nanowire-based light-emitting diodes and light-detection devices with nanocrystalline outer surface'2011 7,803,698'Methods for controlling catalyst nanoparticle positioning and apparatus for growing a nanowire'2010 7,804,175'Semiconductor structures including conductive vias continuously extending therethrough and methods of making the same'2010 7,804,157'Device configured to have a nanowire formed laterally between two electrodes and methods for forming the same'2010 7,805,030'Optical structures including selectively positioned color centers, photonic chips including same, and methods of fabricating optical structures'2010 7,781,853'Plasmon-enhanced electromagnetic-radiation-emitting devices and methods for fabricating the same'2010 7,764,850'Optical modulator including electrically controlled ring resonator'2010 7,751,655'Micro-ring optical detector/modulator'2010 7,720,342'Optical device with a graded bandgap structure and methods of making and using the same'2010 7,719,073'Capacitively coupling layers of a multilayer device'2010 7,719,688'Optical device and method of making the same'2010 7,719,678'Nanowire configured to couple electromagnetic radiation to selected guided wave, devices using same, and methods of fabricating same'2010 7,719,771'Deformable optical element, methods of making and uses thereof'2010 7,691,201'Method of forming three-dimensional nanocrystal array'2010 7,659,631'Interconnection between different circuit types'2010 7,638,431'Composite nanostructure apparatus and method'2009 7,609,916'Electrical contact apparatus for optical waveguides'2009 7,608,854'Electronic device and method of making the same'2009 7,609,432'Nanowire-based device and method of making same'2009 7,591,193'Hot-wire nano-anemometer'2009 7,592,679'Sensor and method for making the same'2009 7,582,975'Nanowire device and method of making the same'2009 7,570,355'Nanowire heterostructures and methods of forming the same'2009 7,566,657'Methods of forming through-substrate interconnects'2009 7,544,591'Method of creating isolated electrodes in a nanowire-based device'2009 7,545,999'Photonic configuration'2009 7,474,811'Nanowire photonic apparatus employing optical field confinement'2009 7,465,954'Nanowire devices and systems, light-emitting nanowires, and methods of precisely positioning nanoparticles'2008 7,446,024'Method of forming nanowires with a narrow diameter distribution'2008 7,427,525'Methods for coupling diamond structures to photonic devices'2008 7,402,531'Method for selectively controlling lengths of nanowires'2008 7,397,558'Ordered array of nanoparticles for efficient nanoenhanced Raman scattering detection and methods of forming the same'2008 7,391,109'Integrated circuit interconnect'2008 7,389,014'Integrated semiconductor circuits and methods of making integrated semiconductor circuits'2008 7,378,347'Method of forming catalyst nanoparticles for nanowire growth and other applications'2008 7,359,048'Raman signal-enhancing structures and devices'2008 7,292,334'Binary arrays of nanoparticles for nano-enhanced Raman scattering molecular sensors'2007 7,245,370'Nanowires for surface-enhanced Raman scattering molecular sensors'2007 7,236,242'Nano-enhanced Raman spectroscopy-active nanostructures including elongated components and methods of making the same'2007 7,235,475'Semiconductor nanowire fluid sensor and method for fabricating the same'2007 7,208,094'Methods of bridging lateral nanowires and device using same'2007 7,190,075'Method of forming smooth polycrystalline silicon electrodes for molecular electronic devices'2007 7,133,577'Optical modulator and methods of making and using optical modulator'2006 7,087,920'Nanowire, circuit incorporating nanowire, and methods of selecting conductance of the nanowire and configuring the circuit'2006 6,972,233'Field effect transistor fabrication including formation of a channel in a pore'2005 6,916,740'Method of forming smooth polycrystalline silicon electrodes for molecular electronic devices'2005 6,885,031'Integrated circuit including single crystal semiconductor layer on non-crystalline layer'2005 6,815,750'Field effect transistor with channel extending through layers on a substrate'2004 6,806,141'Field effect transistor with gate layer and method of making same'2004 6,791,338'Gated nanoscale switch having channel of molecular wires'2004 6,773,616'Formation of nanoscale wires'2004 6,706,204'Method of fabricating and a device that includes nanosize pores having well controlled geometries'2004 6,620,710'Forming a single crystal semiconductor film on a non-crystalline surface'2003 6,429,466'Integrated circuit substrate that accommodates lattice mismatch stress'2002 6,315,384'Thermal inkjet printhead and high-efficiency polycrystalline silicon resistor system for use therein'2001 6,248,674'Method of aligning nanowires'2001 6,211,095'Method for relieving lattice mismatch stress in semiconductor devices'2001 5,633,179'Method of forming silicon/silicon-germanium heterojunction bipolar transistor'1997 5,557,596'Ultra-high density storage device'1996 5,256,550'Fabricating a semiconductor device with strained Si.sub.1-x Ge.sub.x layer'1993 5,252,143'Bipolar transistor structure with reduced collector-to-substrate capacitance'1993 5,202,284'Selective and non-selective deposition of Si.sub.1-x Ge.sub.x on a Si subsrate that is partially masked with SiO.sub.2'1993 5,177,025'Method of fabricating an ultra-thin active region for high speed semiconductor devices'1993 5,084,411'Semiconductor processing with silicon cap over Si.sub.1-x Ge.sub.x Film'1992 4,810,664'Method for making patterned implanted buried oxide transistors and structures'1989 4,522,662'CVD lateral epitaxial growth of silicon over insulators'1985 4,507,158'Trench isolated transistors in semiconductor films'1985 4,163,243'One-transistor memory cell with enhanced capacitance'1979 4,160,985'Photosensing arrays with improved spatial resolution'1979 4,087,571'Controlled temperature polycrystalline silicon nucleation'1978

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1978–1979Based in Mountain View, CA, US· patent location history

1979–2001Patents assigned to HEWLETT PACKARD CO (12)· patent assignee history

1985–2021Based in Palo Alto, CA, US· patent location history

2003–2015Patents assigned to HEWLETT PACKARD DEVELOPMENT CO (81)· patent assignee history

2011–2016Patents assigned to KAMINS THEODORE I (15)· patent assignee history

2015–2018Patents assigned to NTHDEGREE TECH WORLDWIDE INC (7)· patent assignee history

2018–2021Patents assigned to PRINTED ENERGY PTY LTD (5)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
HEWLETT PACKARD DEVELOPMENT CO	81	2003–2015
KAMINS THEODORE Iself	15	2011–2016
HEWLETT PACKARD CO	12	1979–2001
NTHDEGREE TECH WORLDWIDE INC	7	2015–2018
PRINTED ENERGY PTY LTD	5	2018–2021

Locations

Location	Patents	Span
Palo Alto, California, US	106	1985–2021
Mountain View, California, US	3	1978–1979