Inventor
William J. Ooms
Inventor
Chandler, AZ, US
Overview
Patents· 43 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices27%
H03KPulse technique15%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
C30BSingle-crystal growth5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
H10NElectric solid-state devices not otherwise provided for4%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution4%
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy3%
Y02PClimate change mitigation technologies in the production or processing of goods3%
B01BBoiling1%
PatentTitleYear
7,342,276'Method and apparatus utilizing monocrystalline insulator'20086,569,553'Fuel processor with integrated fuel cell utilizing ceramic technology'20036,563,118'Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same'20036,559,471'Quantum well infrared photodetector and method for fabricating same'20036,555,946'Acoustic wave device and process for forming the same'20036,493,497'Electro-optic structure and process for fabricating same'20026,472,278'Method and apparatus for creating a voltage threshold in a FET'20026,410,941'Reconfigurable systems using hybrid integrated circuits with optical ports'20026,387,559'Direct methanol fuel cell system and method of fabrication'20026,367,261'Thermoelectric power generator and method of generating thermoelectric power in a steam power cycle utilizing latent steam heat'20026,262,461'Method and apparatus for creating a voltage threshold in a FET'20016,262,462'Enhanced dielectric constant gate insulator'20016,248,459'Semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon'20016,241,821'Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon'20016,224,669'Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon'20016,097,047'Ferroelectric semiconductor device, and ferroelectric semiconductor substrate'20006,091,621'Non-volatile multistate memory cell using a ferroelectric gate fet'20006,025,735'Programmable switch matrix and method of programming'20006,020,213'Method for making ferroelectric semiconductor device'20005,973,379'Ferroelectric semiconductor device'19995,923,184'Ferroelectric transistor logic functions for programming'19995,888,296'Method for making a ferroelectric semiconductor device and a layered structure'19995,874,755'Ferroelectric semiconductor device and method of manufacture'19995,851,844'Ferroelectric semiconductor device and method of manufacture'19985,846,847'Method of manufacturing a ferroelectric device'19985,767,543'Ferroelectric semiconductor device having a layered ferroelectric structure'19985,719,088'Method of fabricating semiconductor devices with a passivated surface'19985,606,184'Heterostructure field effect device having refractory ohmic contact directly on channel layer and method for making'19975,480,829'Method of making a III-V complementary heterostructure device with compatible non-gold ohmic contacts'19965,457,405'Complementary logic recovered energy circuit'19955,426,382'Complementary logic recovered energy circuit'19955,243,206'Logic circuit using vertically stacked heterojunction field effect transistors'19935,142,349'Self-doped high performance complementary heterojunction field effect transistor'19925,049,760'High speed complementary flipflop'19915,039,881'High speed, low power input buffer'19915,020,017'Method and apparatus for obtaining the quotient of two numbers within one clock cycle'19914,959,624'Coil-less overtone crystal oscillator'19904,585,957'Diode load emitter coupled logic circuits'19864,325,031'Divider with dual modulus prescaler for phase locked loop frequency synthesizer'19824,316,151'Phase locked loop frequency synthesizer using multiple dual modulus prescalers'19824,125,853'Integrated circuit transistor'19784,125,855'Integrated semiconductor crosspoint arrangement'19784,096,399'Crosspoint bias circuit arrangement'1978Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1978Patents assigned to BELL TELEPHONE LABOR INC (3)· patent assignee history
1978Based in Schaumburg, IL, US· patent location history
1982–2003Patents assigned to MOTOROLA INC (39)· patent assignee history
1982Based in Hazelcrest, IL, US· patent location history
1986Based in Fort Lauderdale, FL, US· patent location history
1990–2003Based in Chandler, AZ, US· patent location history
2002–2008Based in Prescott, AZ, US· patent location history
2008Patents assigned to FREESCALE SEMICONDUCTOR INC (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MOTOROLA INC | 39 | 1982–2003 |
| BELL TELEPHONE LABOR INC | 3 | 1978 |
| FREESCALE SEMICONDUCTOR INC | 1 | 2008 |
Locations
| Location | Patents | Span |
|---|---|---|
| Chandler, AZ, US | 32 | 1990–2003 |
| Prescott, AZ, US | 5 | 2002–2008 |
| Schaumburg, Illinois, US | 3 | 1978 |
| Hazelcrest, Illinois, US | 2 | 1982 |
| Fort Lauderdale, Florida, US | 1 | 1986 |