Inventor
Marinus Hopstaken
Inventor
Carmel, NY, US
Overview
Patents· 24 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices23%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution17%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation15%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
Y02PClimate change mitigation technologies in the production or processing of goods11%
H10DInorganic electric semiconductor devices8%
C23CCoating metallic material4%
H10NElectric solid-state devices not otherwise provided for4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form1%
PatentTitleYear
10,991,881Method for controlling the forming voltage in resistive random access memory devices202110,978,604Bandgap grading of CZTS solar cell202110,971,626Interface charge reduction for SiGe surface202110,833,311Method of making an anode structure containing a porous region202010,546,745Semiconductor processing method202010,529,832Shallow, abrupt and highly activated tin extension implant junction202010,381,479Interface charge reduction for SiGe surface201910,304,979In situ nitrogen doping of co-evaporated copper-zinc-tin-sulfo-selenide by nitrogen plasma201910,134,929Achieving band gap grading of CZTS and CZTSe materials20189,917,220'Buffer layer for high performing and low light degraded solar cells'20189,911,879'In situ nitrogen doping of co-evaporated copper-zinc-tin-sulfo-selenide by nitrogen plasma'20189,812,599'Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys'20179,722,120'Bandgap grading of CZTS solar cell'20179,698,339'Magnetic tunnel junction encapsulation using hydrogenated amorphous semiconductor material'20179,679,775'Selective dopant junction for a group III-V semiconductor device'20179,418,846'Selective dopant junction for a group III-V semiconductor device'20169,306,107'Buffer layer for high performing and low light degraded solar cells'20169,203,022'Resistive random access memory devices with extremely reactive contacts'20159,184,322'Titanium incorporation into absorber layer for solar cell'20159,099,585'Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys'20158,778,448'Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys'20148,722,548'Structures and techniques for atomic layer deposition'20148,628,999'Solar cell made in a single processing chamber'20148,617,938'Device and method for boron diffusion in semiconductors'2013Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2013–2021Patents assigned to IBM (24)· patent assignee history
2013–2015Patents assigned to HOPSTAKEN MARINUS (4)· patent assignee history
2013–2015Patents assigned to SADANA DEVENDRA K (4)· patent assignee history
2013–2021Based in Carmel, NY, US· patent location history
2014–2015Patents assigned to HEKMATSHOAR-TABARI BAHMAN (2)· patent assignee history
2015Patents assigned to GLOBALFOUNDRIES INC (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 24 | 2013–2021 |
| HOPSTAKEN MARINUSself | 4 | 2013–2015 |
| SADANA DEVENDRA K | 4 | 2013–2015 |
| GLOBALFOUNDRIES INC | 2 | 2015 |
| HEKMATSHOAR-TABARI BAHMAN | 2 | 2014–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Carmel, New York, US | 24 | 2013–2021 |