Inventor

James Wu

Inventor

Kaohsiung, TW

Overview

1998–2009

Patent span

Electricity

Primary field (CPC H)

Patents· 14 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary

H10BElectronic memory devices26%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1026%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1026%

H10DInorganic electric semiconductor devices15%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%

PatentTitleYear

7,482,278'Key-hole free process for high aspect ratio gap filling with reentrant spacer'2009 6,939,726'Via array monitor and method of monitoring induced electrical charging'2005 6,555,435'Method to eliminate shorts between adjacent contacts due to interlevel dielectric voids'2003 6,403,416'Method for making a double-cylinder-capacitor structure for dynamic random access memory (DRAM)'2002 6,365,464'Method to eliminate shorts between adjacent contacts due to interlevel dielectric voids'2002 6,323,118'Borderless dual damascene contact'2001 6,274,426'Self-aligned contact process for a crown shaped dynamic random access memory capacitor structure'2001 6,265,315'Method for improving chemical/mechanical polish uniformity over rough topography for semiconductor integrated circuits'2001 6,228,736'Modified method for forming cylinder-shaped capacitors for dynamic random access memory (DRAM)'2001 6,027,969'Capacitor structure for a dynamic random access memory cell'2000 6,020,236'Method to form capacitance node contacts with improved isolation in a DRAM process'2000 6,017,824'Passivation etching procedure, using a polysilicon stop layer, for repairing embedded DRAM cells'2000 6,015,733'Process to form a crown capacitor structure for a dynamic random access memory cell'2000 5,854,119'Robust method of forming a cylinder capacitor for DRAM circuits'1998

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1998–2009Patents assigned to TAIWAN SEMICONDUCTOR MFG (13)· patent assignee history

1998Based in Kuan Tien Hsiang, TW· patent location history

2000–2009Based in Kaohsiung, TW· patent location history

2000–2005Based in Kaoshiung, TW· patent location history

2001Patents assigned to TAIWAN SEMICONDUCTOR FOR MFG C (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG	13	1998–2009
TAIWAN SEMICONDUCTOR FOR MFG C	1	2001

Locations

Location	Patents	Span
Kaohsiung, TW	11	2000–2009
Kaoshiung, TW	2	2000–2005
Kuan Tien Hsiang, TW	1	1998