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Inventor

Jin-Hong Ahn

Inventor
Kyungki-do, KR

Overview

90→
Patents
1996–2020
Patent span
Physics
Primary field (CPC G)

Patents· 90 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores41%
H10DInorganic electric semiconductor devices13%
H10BElectronic memory devices8%
H03KPulse technique7%
G06KGraphical data reading6%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
B82YSpecific uses or applications of nanostructures2%
G01RMeasuring electric variables2%
G06FElectric digital data processing2%
PatentTitleYear
10,817,765Semiconductor device and controller for asynchronous serial communication, and asynchronous serial communication method and system202010,629,503Semiconductor device containing integrated circuit communicating with external apparatus via two terminals202010,269,665Semiconductor device for sensor application using contacts located on top surface and bottom surface and method for fabricating thereof20198,917,079'Reference potential adjustment device and a measuring device equipped with the same'20148,891,275'Stacked dynamic random access memory'2014RE045036'Semiconductor memory device'20148,322,626'Integrated circuit with embedded RFID'20128,125,844'Semiconductor memory device for low voltage'20128,115,244'Transistor of volatile memory device with gate dielectric structure capable of trapping charges'2012RE042976'Semiconductor memory device with reduced data access time'20118,035,146'Nonvolatile ferroelectric memory device'20118,000,163'Self refresh operation of semiconductor memory device'20118,000,164'Self refresh operation of semiconductor memory device'20117,957,212'Pseudo SRAM'20117,902,963'RFID device having nonvolatile ferroelectric memory device'20117,883,019'Integrated circuit with embedded FeRAM-based RFID'20117,870,362'Semiconductor memory device having advanced tag block'20117,800,481'RFID device having a nonvolatile ferroelectric memory'20107,746,708'Nonvolatile latch circuit and system on chip with the same'20107,741,668'Nonvolatile ferroelectric memory device'20107,728,369'Nonvolatile ferroelectric memory device'20107,710,809'Self refresh operation of semiconductor memory device'20107,710,240'RFID device having nonvolatile ferroelectric capacitor'20107,710,759'Nonvolatile ferroelectric memory device'20107,608,868'Semiconductor device and method for manufacturing the same'20097,602,658'RFID device having nonvolatile ferroelectric memory device'20097,573,768'Low voltage semiconductor memory device'20097,573,290'Data output driver for reducing noise'20097,511,538'Data input buffer in semiconductor device'20097,449,392'Semiconductor device capable of threshold voltage adjustment by applying an external voltage'20087,432,743'Data input butter for use in a semiconductor device'20087,421,636'Semiconductor memory device having a test control circuit'20087,417,910'Low voltage semiconductor memory device'20087,417,528'RFID device having nonvolatile ferroelectric memory device'20087,408,801'Nonvolatile semiconductor memory device'20087,366,039'RFID device having nonvolatile ferroelectric memory device'20087,363,460'Semiconductor memory device having tag block for reducing initialization time'20087,359,268'Semiconductor memory device for low voltage'20087,358,797'Semiconductor device having secure operating characteristic under low power environment'20087,360,144'Multi-bit nonvolatile ferroelectric memory device having fail cell repair circuit and repair method thereof'20087,355,913'Semiconductor memory device'20087,352,605'Nonvolatile ferroelectric memory device and method thereof'20087,352,634'Nonvolatile latch circuit and system on chip with the same'20087,342,424'Data input buffer in semiconductor device'20087,313,037'RFID system including a memory for correcting a fail cell and method for correcting a fail cell using the same'20077,310,268'Float gate memory device'20077,307,872'Nonvolatile semiconductor static random access memory device'20077,304,504'Output driver in semiconductor device'20077,305,607'Nonvolatile ferroelectric memory device including failed cell correcting circuit'20077,301,207'Semiconductor device capable of threshold voltage adjustment by applying an external voltage'20077,295,482'Semiconductor memory device for a low voltage operation'20077,280,429'Data latch circuit of semiconductor device and method for latching data signal'20077,274,593'Nonvolatile ferroelectric memory device'20077,269,054'Nonvolatile semiconductor memory device'20077,265,596'Data latch circuit of semiconductor device'20077,251,174'Semiconductor memory device for low power system'20077,229,881'Dynamic random access memory of semiconductor device and method for manufacturing the same'20077,224,609'Apparatus and method of driving non-volatile DRAM'20077,221,606'Semiconductor memory device for low power system comprising sense amplifier with operating voltages lower/higher than ground/voltage supply and auxiliary sense amplifier'20077,220,651'Transistor and method for manufacturing the same'20077,218,548'Semiconductor memory device for low voltage'20077,212,431'Nonvolatile ferroelectric memory device and control method thereof'20077,180,325'Data input buffer in semiconductor device'20077,174,418'Semiconductor memory device for enhancing refresh operation in high speed data access'20077,164,594'Nonvolatile ferroelectric memory device'20077,161,378'Semiconductor memory device with on die termination circuit'20077,151,034'Semiconductor device and method for manufacturing the same'20067,145,821'Semiconductor memory device for low power system'20067,132,855'Level shift circuit for use in semiconductor device'20067,126,867'Semiconductor memory device for low power system'20067,126,185'Charge trap insulator memory device'20067,099,181'Non-volatile dynamic random access memory'20067,088,637'Semiconductor memory device for high speed data access'20067,054,201'Driving circuit for non-volatile DRAM'20066,996,007'Apparatus and method of driving non-volatile DRAM'20066,937,535'Semiconductor memory device with reduced data access time'20056,930,951'Semiconductor memory device capable of accessing data in continuous burst mode regardless of location of accessed data'20056,288,586'Circuit for standby current reduction'20016,198,326'Delay time compensation circuit for clock buffer'20016,011,738'Sensing circuit with charge recycling'20006,005,826'Address signal transition detecting circuit for semiconductor memory device'19996,002,625'Cell array and sense amplifier structure exhibiting improved noise characteristic and reduced size'19995,943,289'Hierarchical word line structure'19995,917,345'Drive signal generating circuit for sense amplifier'19995,886,944'Memory device having page copy mode'19995,777,493'Drive signal generating circuit for sense amplifier'19985,644,543'Semiconductor memory apparatus having sense amplifiers connected to both ends of a pair of bit lines'19975,625,585'Bit line structure with bit line pass over configuration'19975,499,205'Bit line structure'19965,499,218'Method for driving bit line selecting signals'1996

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1996–1997Patents assigned to GOLD STAR ELECTRONICS (3)· patent assignee history
1996–2014Based in Kyungki-do, KR· patent location history
1997–2000Patents assigned to LG SEMICON CO LTD (8)· patent assignee history
2001Patents assigned to HYUNDAI ELECTRONICS IND (2)· patent assignee history
2005–2012Patents assigned to HYNIX SEMICONDUCTOR INC (70)· patent assignee history
2005–2012Based in Ichon-shi, KR· patent location history
2006–2020Based in Gyeonggi-do, KR· patent location history
2008–2011Based in Anyang-si, KR· patent location history
2011–2012Patents assigned to AHN JIN-HONG (4)· patent assignee history
2014–2020Based in Yongin-si, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HYNIX SEMICONDUCTOR INC702005–2012
LG SEMICON CO LTD81997–2000
AHN JIN-HONGself42011–2012
GOLD STAR ELECTRONICS31996–1997
HYUNDAI ELECTRONICS IND22001
Locations
LocationPatentsSpan
Kyungki-do, KR341996–2014
Gyeonggi-do, KR252006–2020
Ichon-shi, KR192005–2012
Anyang-si, KR62008–2011
Yongin-si, KR32014–2020