Inventor

Kiichiro Mukai

Inventor

Hachioji, JP

Overview

1982–2004

Patent span

Electricity

Primary field (CPC H)

Patents· 21 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1026%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1018%

H10BElectronic memory devices12%

H10DInorganic electric semiconductor devices12%

C23CCoating metallic material6%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%

H01JElectric discharge tubes or discharge lamps4%

B05BSpraying apparatus2%

B05CApparatus for applying fluent materials to surfaces, in general2%

C23FNon-mechanical removal of metallic material from surface2%

PatentTitleYear

6,747,339'Integrated circuit having reduced soft errors and reduced penetration of alkali impurities into the substrate'2004 6,551,765'Coating apparatus, discharge device, and coating method'2003 5,643,473'Dry etching method'1997 5,391,915'Integrated circuit having reduced soft errors and reduced penetration of alkali impurities into the substrate'1995 5,292,673'Method of manufacturing a semiconductor device'1994 5,147,500'Dry etching method'1992 5,079,191'Process for producing a semiconductor device'1992 5,013,526'Superconducting alloys comprising tungsten, molybdenum, silicon and oxygen'1991 4,956,043'Dry etching apparatus'1990 4,943,344'Etching method'1990 4,937,650'Semiconductor capacitor device with dual dielectric'1990 4,926,238'Semiconductor device and method for producing the same'1990 4,897,709'Titanium nitride film in contact hole with large aspect ratio'1990 4,891,684'Semiconductor device'1990 4,857,137'Process for surface treatment'1989 4,842,891'Method of forming a copper film by chemical vapor deposition'1989 4,809,052'Semiconductor memory device'1989 4,636,833'Semiconductor device'1987 4,599,135'Thin film deposition'1986 4,570,175'Three-dimensional semiconductor device with thin film monocrystalline member contacting substrate at a plurality of locations'1986 4,365,264'Semiconductor device with high density low temperature deposited Si.sub.w N.sub.x H.sub.y O.sub.z passivating layer'1982

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1982–2004Patents assigned to HITACHI LTD (20)· patent assignee history

1982–2004Based in Hachioji, JP· patent location history

1990–1994Based in Tokyo, JP· patent location history

2003Patents assigned to TOSHIBA KK (1)· patent assignee history

2003Based in Yokohama, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
HITACHI LTD	20	1982–2004
TOSHIBA KK	1	2003

Locations

Location	Patents	Span
Hachioji, JP	17	1982–2004
Tokyo, JP	3	1990–1994
Yokohama, JP	1	2003