Inventor

Chih Chieh Yeh

Inventor

Taipei, TW

Overview

2003–2020

Patent span

Electricity

Primary field (CPC H)

Patents· 168 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices29%

H01LSemiconductor devices21%

G11CStatic stores15%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%

H10BElectronic memory devices7%

B82YSpecific uses or applications of nanostructures3%

H10HInorganic light-emitting semiconductor devices having potential barriers0%

A61KPreparations for medical, dental or toiletry purposes0%

A61PSpecific therapeutic activity of chemical compounds or medicinal preparations0%

PatentTitleYear

10,872,893Dual nitride stressor for semiconductor device and method of manufacturing2020 10,867,841Semiconductor device and method of manufacturing the same2020 10,825,907Self-aligned contact and manufacturing method thereof2020 10,811,318FIN field effect transistor (FinFET) device structure with dummy FIN structure2020 10,804,268Vertical gate semiconductor device with steep subthreshold slope2020 10,804,367Gate stacks for stack-fin channel I/O devices and nanowire channel core devices2020 10,804,375Semiconductor device and method for manufacturing the same2020 10,727,110Semiconductor device and method of manufacturing the same2020 10,727,344Method of manufacturing a semiconductor device with multilayered channel structure2020 10,727,298Strained nanowire CMOS device and method of forming2020 10,720,496FinFET structures and methods of forming the same2020 10,700,206Semiconductor device and manufacturing method thereof2020 10,693,003Integrated circuit transistor structure with high germanium concentration SiGe stressor2020 10,672,667Semiconductor device and method2020 10,665,569Vertical transistor device and method for fabricating the same2020 10,535,732Strained nanowire CMOS device and method of forming2020 10,522,409Fin field effect transistor (FinFET) device structure with dummy fin structure and method for forming the same2019 10,522,625Multi-gate device and method of fabrication thereof2019 10,522,694Methods of manufacturing semiconductor device2019 10,516,056Semiconductor device and manufacturing method thereof2019 10,504,796Semiconductor device and method for manufacturing the same2019 10,483,262Dual nitride stressor for semiconductor device and method of manufacturing2019 10,483,157Semiconductor device and method of manufacturing the same2019 10,438,851Threshold voltage adjustment for a gate-all-around semiconductor structure2019 10,374,059Structure and formation method of semiconductor device structure with nanowires2019 10,355,133Method for forming a semiconductor device including a stacked wire structure2019 10,340,366Semiconductor device and manufacturing method thereof2019 10,297,508Semiconductor device and method2019 10,290,550Strain enhancement for FinFETs2019 10,290,546Threshold voltage adjustment for a gate-all-around semiconductor structure2019 10,269,800Vertical gate semiconductor device with steep subthreshold slope2019 10,269,934Method for manufacturing tunnel field effect transistor2019 10,263,091Multiple gate field effect transistors having oxygen-scavenged gate stack2019 10,204,985Structure and formation method of semiconductor device structure2019 10,181,524Vertical transistor device and method for fabricating the same2019 10,170,374Semiconductor device and method for manufacturing the same2019 10,164,032Self-aligned contact and manufacturing method thereof2018 10,147,819Semiconductor device and manufacturing method thereof2018 10,141,310Short channel effect suppression2018 10,134,847FinFET structures and methods of forming the same2018 10,134,843Multi-gate device and method of fabrication thereof2018 10,134,640Semiconductor device structure with semiconductor wire2018 10,062,782Method of manufacturing a semiconductor device with multilayered channel structure2018 10,037,912Semiconductor device and method of manufacturing the same2018 10,038,080Semiconductor device and manufacturing method thereof2018 10,002,969Semiconductor device and manufacturing method thereof2018 9,997,616Semiconductor device having a strained region2018 9,972,545System and method for a field-effect transistor with dual vertical gates2018 9,887,100'Methods of forming semiconductor devices and structures thereof'2018 9,876,117Structure and formation method of semiconductor device structure2018 9,853,101Strained nanowire CMOS device and method of forming2017 9,741,829'Semiconductor device and manufacturing method thereof'2017 9,735,274'Semiconductor device including a stacked wire structure'2017 9,728,461'Method of forming semiconductor device with different threshold voltages'2017 9,721,829'FinFETs with different fin height and EPI height setting'2017 9,711,412'FinFETs with different fin heights'2017 9,698,060'Germanium FinFETs with metal gates and stressors'2017 9,659,826'Asymmetric source/drain depths'2017 9,660,025'Structure and formation method of semiconductor device structure'2017 9,660,082'Integrated circuit transistor structure with high germanium concentration SiGe stressor'2017 9,659,780'Multiple gate field-effect transistors having oxygen-scavenged gate stack'2017 9,660,033'Multi-gate device and method of fabrication thereof'2017 9,647,071'FINFET structures and methods of forming the same'2017 9,640,441'Voids in STI regions for forming bulk FinFETs'2017 9,627,540'Semiconductor device and manufacturing method thereof'2017 9,627,531'Field-effect transistor with dual vertical gates'2017 9,601,598'Method of manufacturing a fin-like field effect transistor (FinFET) device'2017 9,583,399'Semiconductor device and manufacturing method thereof'2017 9,577,071'Method of making a strained structure of a semiconductor device'2017 9,564,489'Multiple gate field-effect transistors having oxygen-scavenged gate stack'2017 9,515,071'Asymmetric source/drain depths'2016 9,502,409'Multi-gate semiconductor devices'2016 9,466,678'Semiconductor device and manufacturing method thereof'2016 9,461,041'Metal gate finFET device'2016 9,450,094'Semiconductor process and fin-shaped field effect transistor'2016 9,425,102'FinFETs with different fin heights'2016 9,419,134'Strain enhancement for FinFETs'2016 9,397,097'Gate structure for semiconductor device'2016 9,385,046'Voids in STI regions for forming bulk FinFETs'2016 9,349,652'Method of forming semiconductor device with different threshold voltages'2016 9,263,342'Semiconductor device having a strained region'2016 9,257,344'FinFETs with different fin height and EPI height setting'2016 9,245,805'Germanium FinFETs with metal gates and stressors'2016 9,177,801'FinFET device having a strained region'2015 9,171,929'Strained structure of semiconductor device and method of making the strained structure'2015 9,112,052'Voids in STI regions for forming bulk FinFETs'2015 9,087,725'FinFETs with different fin height and EPI height setting'2015 8,987,824'Multi-gate semiconductor devices'2015 8,941,153'FinFETs with different fin heights'2015 8,921,218'Metal gate finFET device and method of fabricating thereof'2014 8,896,055'Accumulation type FinFET, circuits and fabrication method thereof'2014 8,847,293'Gate structure for semiconductor device'2014 8,796,759'Fin-like field effect transistor (FinFET) device and method of manufacturing same'2014 8,748,993'FinFETs with multiple fin heights'2014 8,673,709'FinFETs with multiple fin heights'2014 8,653,609'FinFET design with reduced current crowding'2014 8,653,608'FinFET design with reduced current crowding'2014 8,623,728'Method for forming high germanium concentration SiGe stressor'2014 8,501,591'Method for manufacturing a multiple-bit-per-cell memory'2013 8,482,057'Circuit and method for a three dimensional non-volatile memory'2013 8,445,340'Sacrificial offset protection film for a FinFET device'2013 8,373,238'FinFETs with multiple Fin heights'2013 8,369,140'Systems and methods for programming a memory device'2013 8,264,032'Accumulation type FinFET, circuits and fabrication method thereof'2012 8,264,021'Finfets and methods for forming the same'2012 8,223,553'Systems and methods for programming a memory device'2012 7,888,707'Gated diode nonvolatile memory process'2011 7,804,152'Recessed shallow trench isolation'2010 7,710,774'NAND type multi-bit charge storage memory array and methods for operating and fabricating the same'2010 7,672,157'Gated diode nonvolatile memory cell array'2010 7,529,128'Integrated code and data flash memory'2009 7,514,742'Recessed shallow trench isolation'2009 7,486,568'Method and apparatus for protection from over-erasing nonvolatile memory cells'2009 7,485,530'Method for manufacturing a multiple-gate charge trapping non-volatile memory'2009 7,483,307'Method and apparatus for sensing in charge trapping non-volatile memory'2009 7,474,558'Gated diode nonvolatile memory cell array'2009 7,439,085'Method and apparatus for electroluminescence'2008 7,440,328'Operation methods for a non-volatile memory cell in an array'2008 7,414,888'Program method and circuit of non-volatile memory'2008 7,397,701'Method and apparatus for operating a string of charge trapping memory cells'2008 7,387,932'Method for manufacturing a multiple-gate charge trapping non-volatile memory'2008 7,366,024'Method and apparatus for operating a string of charge trapping memory cells'2008 7,345,920'Method and apparatus for sensing in charge trapping non-volatile memory'2008 7,327,607'Method and apparatus for operating nonvolatile memory cells in a series arrangement'2008 7,327,611'Method and apparatus for operating charge trapping nonvolatile memory'2008 7,324,376'Method and apparatus for operating nonvolatile memory cells in a series arrangement'2008 7,321,145'Method and apparatus for operating nonvolatile memory cells with modified band structure'2008 7,307,888'Method and apparatus for operating nonvolatile memory in a parallel arrangement'2007 7,283,389'Gated diode nonvolatile memory cell array'2007 7,272,043'Operation methods for a non-volatile memory cell in an array'2007 7,272,038'Method for operating gated diode nonvolatile memory cell'2007 7,269,062'Gated diode nonvolatile memory cell'2007 7,230,277'Method and apparatus for electroluminescence'2007 7,224,619'Method and apparatus for protection from over-erasing nonvolatile memory cells'2007 7,209,386'Charge trapping non-volatile memory and method for gate-by-gate erase for same'2007 7,180,123'Method for programming programmable eraseless memory'2007 7,173,849'Method of programming and erasing multi-level flash memory'2007 7,170,785'Method and apparatus for operating a string of charge trapping memory cells'2007 7,158,411'Integrated code and data flash memory'2007 7,132,350'Method for manufacturing a programmable eraseless memory'2006 7,133,317'Method and apparatus for programming nonvolatile memory'2006 7,130,215'Method and apparatus for operating a non-volatile memory device'2006 7,120,059'Memory array including multiple-gate charge trapping non-volatile cells'2006 7,106,625'Charge trapping non-volatile memory with two trapping locations per gate, and method for operating same'2006 7,095,544'Micromirror and products using the same'2006 7,072,220'Method and apparatus for operating a non-volatile memory array'2006 7,072,219'Method and apparatus for operating a non-volatile memory array'2006 7,057,938'Nonvolatile memory cell and operating method'2006 7,035,147'Overerase protection of memory cells for nonvolatile memory'2006 7,031,196'Nonvolatile semiconductor memory and operating method of the memory'2006 6,996,011'NAND-type non-volatile memory cell and method for operating same'2006 6,970,380'Method for programming non-volatile memory'2005 6,958,934'Method of programming and erasing multi-level flash memory'2005 6,917,073'ONO flash memory array for improving a disturbance between adjacent memory cells'2005 6,914,819'Non-volatile flash memory'2005 6,882,575'Erasing method for non-volatile memory'2005 6,829,175'Erasing method for non-volatile memory'2004 6,822,910'Non-volatile memory and operating method thereof'2004 6,801,453'Method and apparatus of a read scheme for non-volatile memory'2004 6,785,163'Trim circuit and method for tuning a current level of a reference cell in a flash memory'2004 6,721,204'Memory erase method and device with optimal data retention for nonvolatile memory'2004 6,690,601'Nonvolatile semiconductor memory cell with electron-trapping erase state and methods for operating the same'2004 6,687,160'Reference current generation circuit for multiple bit flash memory'2004 6,665,212'Reference current generating circuit of multiple bit flash memory'2003 6,657,894'Apparatus and method for programming virtual ground nonvolatile memory cell array without disturbing adjacent cells'2003 6,646,924'Non-volatile memory and operating method thereof'2003 6,643,176'Reference current generation circuit for multiple bit flash memory'2003 6,614,694'Erase scheme for non-volatile memory'2003

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2003–2013Patents assigned to MACRONIX INT CO LTD (63)· patent assignee history

2003–2020Based in Taipei, TW· patent location history

2004–2017Based in Hsinchu, TW· patent location history

2006–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (26)· patent assignee history

2006–2008Based in Jhongshan District, TW· patent location history

2006Based in Jhongshan, TW· patent location history

2012–2016Patents assigned to YEH CHIH CHIEH (17)· patent assignee history

2013–2016Patents assigned to LEE TSUNG-LIN (7)· patent assignee history

2015–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (76)· patent assignee history

2016Based in Tainan, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	76	2015–2020
MACRONIX INT CO LTD	63	2003–2013
TAIWAN SEMICONDUCTOR MFG	26	2006–2016
YEH CHIH CHIEHself	17	2012–2016
LEE TSUNG-LIN	7	2013–2016

Locations

Location	Patents	Span
Taipei, TW	149	2003–2020
Hsinchu, TW	11	2004–2017
Jhongshan District, TW	5	2006–2008
Tainan, TW	2	2016
Jhongshan, TW	1	2006