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Inventor

Heng-Kai Hsu

Inventor
Hisnchu, TW

Overview

3→
Patents
2006–2016
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices40%
H10HInorganic light-emitting semiconductor devices having potential barriers40%
H01JElectric discharge tubes or discharge lamps20%
PatentTitleYear
9,306,126'Oxides with thin metallic layers as transparent ohmic contacts for p-type and n-type gallium nitride'20169,246,062'Zinc stannate ohmic contacts for p-type gallium nitride'20167,057,191'Method of controlling implant dosage and pressure compensation factor in-situ'2006

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2006Patents assigned to PROMOS TECHNOLOGIES INC (1)· patent assignee history
2006Based in Hsinchu, TW· patent location history
2016Patents assigned to INTERMOLECULAR INC (2)· patent assignee history
2016Based in Hisnchu, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
INTERMOLECULAR INC22016
PROMOS TECHNOLOGIES INC12006
Locations
LocationPatentsSpan
Hisnchu, TW22016
Hsinchu, TW12006