LexDanaLexDanabeta
Inventor

Tomoyoshi Mishima

Inventor
Shiki, JP

Overview

19→
Patents
1987–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 19 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices37%
H01LSemiconductor devices16%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light7%
H10HInorganic light-emitting semiconductor devices having potential barriers7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
G02BOptical elements, systems or apparatus5%
B82YSpecific uses or applications of nanostructures2%
C23CCoating metallic material2%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
PatentTitleYear
10,797,181Semiconductor device and method for manufacturing the same202010,685,841Semiconductor device202010,483,350Semiconductor device20199,899,570'Semiconductor multilayer structure and method of manufacturing the same'20189,530,858'Nitride semiconductor device and method of manufacturing the same'20169,059,328'Nitride semiconductor element and method of manufacturing the same'20158,835,930'Gallium nitride rectifying device'20147,786,509'Field-effect transistor and method of making same'20106,735,353'Module for optical transmitter'20046,728,283'Semiconductor laser and photo module using the same'20045,633,516'Lattice-mismatched crystal structures and semiconductor device using the same'19975,548,138'Semiconductor device with reduced tunnel resistance and circuitry using the same'19965,495,115'Semiconductor crystalline laminate structure, forming method of the same, and semiconductor device employing the same'19965,481,120'Semiconductor device and its fabrication method'19965,003,366'Hetero-junction bipolar transistor'19914,914,488'Compound semiconductor structure and process for making same'19904,835,583'Semiconductor device having strained superlattice buffer layers with In-doped GaAs substrate'19894,673,959'Heterojunction FET with doubly-doped channel'19874,672,406'Semiconductor member and semiconductor device employing the same'1987

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1987–2004Patents assigned to HITACHI LTD (11)· patent assignee history
1987–2016Based in Shiki, JP· patent location history
2014–2015Patents assigned to HITACHI METALS LTD (2)· patent assignee history
2015–2020Based in Tokyo, JP· patent location history
2016–2020Patents assigned to SUMITOMO CHEMICAL CO (5)· patent assignee history
2019–2020Patents assigned to SCIOCS CO LTD (3)· patent assignee history
2019–2020Patents assigned to UNIV HOSEI (3)· patent assignee history
2019–2020Based in Koganei, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HITACHI LTD111987–2004
SUMITOMO CHEMICAL CO52016–2020
SCIOCS CO LTD32019–2020
UNIV HOSEI32019–2020
HITACHI METALS LTD22014–2015
Locations
LocationPatentsSpan
Shiki, JP141987–2016
Tokyo, JP32015–2020
Koganei, JP22019–2020