Inventor

Pramit Manna

Inventor

Sunnyvale, CA, US

Overview

48→

Patents

2016–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 48 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary

H01LSemiconductor devices28%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1027%

C23CCoating metallic material15%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%

H10DInorganic electric semiconductor devices5%

H01JElectric discharge tubes or discharge lamps3%

H10BElectronic memory devices3%

C01BNon-metallic elements1%

G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices1%

G06FElectric digital data processing1%

PatentTitleYear

11,131,015High pressure oxidation of metal films2021 11,062,939High bias deposition of high quality gapfill2021 11,043,372High-density low temperature carbon films for hardmask and other patterning applications2021 11,043,379Conformal carbon film deposition2021 11,028,477Bottom-up gap-fill by surface poisoning treatment2021 11,011,384Gapfill using reactive anneal2021 10,954,129Diamond-like carbon as mandrel2021 10,950,498Selective and self-limiting tungsten etch process2021 10,910,381Multicolor approach to DRAM STI active cut patterning2021 10,886,1403D NAND etch2021 10,840,088Low temperature high-quality dielectric films2020 10,818,490Controlled growth of thin silicon oxide film at low temperature2020 10,811,303Methods for gapfill in high aspect ratio structures2020 10,784,107Methods of forming tungsten pillars2020 10,745,282Diamond-like carbon film2020 10,741,435Oxidative volumetric expansion of metals and metal containing compounds2020 10,714,339Selectively deposited parylene masks and methods related thereto2020 10,699,903Two-step process for gapfilling high aspect ratio trenches with amorphous silicon film2020 10,643,841Surface modification to improve amorphous silicon gapfill2020 10,636,669Seam healing using high pressure anneal2020 10,626,495Bottom-up growth of silicon oxide and silicon nitride using sequential deposition-etch-treat processing2020 10,615,050Methods for gapfill in high aspect ratio structures2020 10,580,642Two-step process for silicon gapfill2020 10,529,568PECVD tungsten containing hardmask films and methods of making2020 10,529,585Dry stripping of boron carbide hardmask2020 10,483,102Surface modification to improve amorphous silicon gapfill2019 10,460,933Two-step process for gapfilling high aspect ratio trenches with amorphous silicon film2019 10,373,823Deployment of light energy within specific spectral bands in specific sequences for deposition, treatment and removal of materials2019 10,347,488Titanium compound based hard mask films2019 10,319,624Oxidative volumetric expansion of metals and metal containing compounds2019 10,312,137Hardmask layer for 3D NAND staircase structure in semiconductor applications2019 10,280,507Flowable gapfill using solvents2019 10,192,775Methods for gapfill in high aspect ratio structures2019 10,176,980Selective deposition of silicon oxide films2019 10,128,150Process of filling the high aspect ratio trenches by co-flowing ligands during thermal CVD2018 10,074,534Ultra-conformal carbon film deposition2018 10,017,856Flowable gapfill using solvents2018 10,014,174Conformal strippable carbon film for line-edge-roughness reduction for advanced patterning2018 9,865,459'Plasma treatment to improve adhesion between hardmask film and silicon oxide film'2018 9,721,784'Ultra-conformal carbon film deposition'2017 9,659,771'Conformal strippable carbon film for line-edge-roughness reduction for advanced patterning'2017 9,640,400'Conformal doping in 3D si structure using conformal dopant deposition'2017 9,624,577'Deposition of metal doped amorphous carbon film'2017 9,583,332'Low temperature cure modulus enhancement'2017 9,412,613'Development of high etch selective hardmask material by ion implantation into amorphous carbon films'2016 9,406,509'Deposition of heteroatom-doped carbon films'2016 9,337,051'Method for critical dimension reduction using conformal carbon films'2016 9,257,330'Ultra-thin structure to protect copper and method of preparation'2016

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2016–2021Patents assigned to APPLIED MATERIALS INC (48)· patent assignee history

2016–2020Based in Santa Clara, CA, US· patent location history

2017–2021Based in Sunnyvale, CA, US· patent location history

2018–2019Based in Milpitas, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
APPLIED MATERIALS INC	48	2016–2021

Locations

Location	Patents	Span
Sunnyvale, California, US	37	2017–2021
Santa Clara, California, US	9	2016–2020
Milpitas, California, US	2	2018–2019