Inventor
Zhiyuan Ye
Inventor
San Jose, CA, US
Overview
Patents· 47 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1030%
H01LSemiconductor devices19%
H10DInorganic electric semiconductor devices14%
C23CCoating metallic material10%
C30BSingle-crystal growth7%
Y10TTechnical subjects covered by former us classification4%
G05DSystems for controlling or regulating non-electric variables3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
G01FMeasuring volume, volume flow, mass flow or liquid level1%
G02BOptical elements, systems or apparatus1%
PatentTitleYear
10,866,135Methods, systems, and apparatus for mass flow verification based on rate of pressure decay202010,770,319EPI thickness tuning by pulse or profile spot heating202010,731,272Methods and apparatus for deposition processes202010,727,093Light pipe window structure for low pressure thermal processes202010,684,159Methods, systems, and apparatus for mass flow verification based on choked flow202010,458,040Upper dome with injection assembly201910,453,721Methods and assemblies for gas flow ratio control201910,440,253Focusing method and terminal201910,276,688Selective process for source and drain formation201910,269,600Methods and assemblies for gas flow ratio control201910,260,164Methods and apparatus for deposition processes201910,256,322Co-doping process for n-MOS source drain application201910,224,421Self-aligned process for sub-10nm fin formation201910,132,003Heating modulators to improve epi uniformity tuning201810,125,415Structure for relaxed SiGe buffers including method and apparatus for forming201810,062,598Thermal processing susceptor201810,043,666Method for inter-chamber process201810,043,870Method and structure to improve film stack with sensitive and reactive layers20189,925,569'Chamber cleaning with infrared absorption gas'20189,923,081'Selective process for source and drain formation'20189,890,455'Pre-heat ring designs to increase deposition uniformity and substrate throughput'20189,845,550Upper dome with injection assembly20179,799,737'Method for forming group III/V conformal layers on silicon substrates'20179,752,224'Structure for relaxed SiGe buffers including method and apparatus for forming'20179,650,726'Methods and apparatus for deposition processes'20179,530,888'MOCVD growth of highly mismatched III-V CMOS channel materials on silicon substrates'20169,460,918'Epitaxy of high tensile silicon alloy for tensile strain applications'20169,200,367'Method and apparatus for gas delivery'20159,159,554'Structure and method of forming metamorphic heteroepi materials and III-V channel structures on si'20159,012,328'Carbon addition for low resistivity in situ doped silicon epitaxy'20158,927,066'Method and apparatus for gas delivery'20158,658,540'Methods for low temperature conditioning of process chambers'20148,652,945'Epitaxy of high tensile silicon alloy for tensile strain applications'20148,603,898'Method for forming group III/V conformal layers on silicon substrates'20138,586,456'Use of CL2 and/or HCL during silicon epitaxial film formation'20138,373,233'Highly N-type and P-type co-doping silicon for strain silicon application'20138,207,023'Methods of selectively depositing an epitaxial layer'20128,029,620'Methods of forming carbon-containing silicon epitaxial layers'20117,960,236'Phosphorus containing Si epitaxial layers in N-type source/drain junctions'20117,960,256'Use of CL2 and/or HCL during silicon epitaxial film formation'20117,897,495'Formation of epitaxial layer containing silicon and carbon'20117,776,698'Selective formation of silicon carbon epitaxial layer'20107,772,074'Method of forming conformal silicon layer for recessed source-drain'20107,732,269'Method of ultra-shallow junction formation using Si film alloyed with carbon'20107,732,305'Use of Cl2 and/or HCl during silicon epitaxial film formation'20107,700,424'Method of forming an embedded silicon carbon epitaxial layer'20107,682,940'Use of Cl2 and/or HCl during silicon epitaxial film formation'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2020Patents assigned to APPLIED MATERIALS INC (46)· patent assignee history
2010–2020Based in San Jose, CA, US· patent location history
2010–2020Based in Cupertino, CA, US· patent location history
2012–2018Patents assigned to YE ZHIYUAN (11)· patent assignee history
2012–2017Patents assigned to KIM YIHWAN (7)· patent assignee history
2012–2015Patents assigned to CHOPRA SAURABH (3)· patent assignee history
2014–2018Patents assigned to LI XUEBIN (3)· patent assignee history
2019Based in Guangdong, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 46 | 2010–2020 |
| YE ZHIYUANself | 11 | 2012–2018 |
| KIM YIHWAN | 7 | 2012–2017 |
| CHOPRA SAURABH | 3 | 2012–2015 |
| LI XUEBIN | 3 | 2014–2018 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Jose, California, US | 33 | 2010–2020 |
| Cupertino, California, US | 13 | 2010–2020 |
| Guangdong, CN | 1 | 2019 |