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Inventor

Nobuji Kobayashi

Inventor
Kakamigahara, JP

Overview

2→
Patents
2009–2014
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices33%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation33%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1033%
PatentTitleYear
8,722,512'Method of manufacturing semiconductor device with a dummy layer'20147,595,224'Method for manufacturing integrated circuit'2009

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2009Patents assigned to SANYO ELECTRIC CO (1)· patent assignee history
2009Based in Anpachi-gun, JP· patent location history
2014Patents assigned to KOBAYASHI NOBUJI (1)· patent assignee history
2014Patents assigned to SANYO SEMICONDUCTOR CO LTD (1)· patent assignee history
2014Patents assigned to SEMICONDUCTOR COMPONENTS IND (1)· patent assignee history
2014Patents assigned to YAMADA TETSUYA (1)· patent assignee history
2014Based in Kakamigahara, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
KOBAYASHI NOBUJIself12014
SANYO ELECTRIC CO12009
SANYO SEMICONDUCTOR CO LTD12014
SEMICONDUCTOR COMPONENTS IND12014
YAMADA TETSUYA12014
Locations
LocationPatentsSpan
Kakamigahara, JP12014
Anpachi-gun, JP12009