Inventor
Gautam Bhandari
Inventor
Danbury, CT, US
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C23Cprimary
C23CCoating metallic material31%
C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium13%
C30BSingle-crystal growth9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
C01BNon-metallic elements4%
F17CVessels for containing or storing compressed, liquefied or solidified gases4%
G01NInvestigating or analysing materials by determining their chemical or physical properties4%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein4%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution4%
PatentTitleYear
6,822,107'Chemical vapor deposition precursors for deposition of copper'20046,645,860'Adhesion promotion method for CVD copper metallization in IC applications'20036,379,748'Tantalum amide precursors for deposition of tantalum nitride on a substrate'20026,355,562'Adhesion promotion method for CVD copper metallization in IC applications'20026,319,565'Stable hydride source compositions for manufacture of semiconductor devices and structures'20016,284,652'Adhesion promotion method for electro-chemical copper metallization in IC applications'20016,265,222'Micro-machined thin film hydrogen gas sensor, and method of making and using the same'20016,245,151'Liquid delivery system comprising upstream pressure control means'20016,178,925'Burst pulse cleaning method and apparatus for liquid delivery system'20016,146,608'Stable hydride source compositions for manufacture of semiconductor devices and structures'20006,102,993'Copper precursor composition and process for manufacture of microelectronic device structures'20006,099,653'Liquid reagent delivery system with constant thermal loading of vaporizer'20006,015,917'Tantalum amide precursors for deposition of tantalum nitride on a substrate'20006,006,582'Hydrogen sensor utilizing rare earth metal thin film detection element'19996,005,127'Antimony/Lewis base adducts for Sb-ion implantation and formation of antimonide films'19996,001,172'Apparatus and method for the in-situ generation of dopants'19995,919,522'Growth of BaSrTiO.sub.3 using polyamine-based precursors'19995,916,359'Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition'19995,902,639'Method of forming bismuth-containing films by using bismuth amide compounds'19995,859,274'Anhydrous mononuclear tris(.beta.-diketonate) bismuth compositions for deposition of bismuth-containing films, and method of making the same'1999Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1999–2004Patents assigned to ADVANCED TECH MATERIALS (19)· patent assignee history
1999–2003Based in Danbury, CT, US· patent location history
2001Patents assigned to SHARP MICROELECT TECH INC (1)· patent assignee history
2001–2004Based in New York, NY, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| ADVANCED TECH MATERIALS | 19 | 1999–2004 |
| SHARP MICROELECT TECH INC | 1 | 2001 |
Locations
| Location | Patents | Span |
|---|---|---|
| Danbury, CT, US | 17 | 1999–2003 |
| New York, New York, US | 3 | 2001–2004 |