Inventor
George E. Ganschow
Inventor
Trabuco Canyon, CA, US
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices38%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1025%
H10BElectronic memory devices19%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
PatentTitleYear
5,482,874'Inversion implant isolation process'19965,436,496'Vertical fuse device'19955,289,024'Bipolar transistor with diffusion compensation'19945,212,102'Method of making polysilicon Schottky clamped transistor and vertical fuse devices'19935,144,404'Polysilicon Schottky clamped transistor and vertical fuse devices'19925,139,961'Reducing base resistance of a BJT by forming a self aligned silicide in the single crystal region of the extrinsic base'19925,045,483'Self-aligned silicided base bipolar transistor and resistor and method of fabrication'1991Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1991–1996Patents assigned to NAT SEMICONDUCTOR CORP (7)· patent assignee history
1991Based in Puyallup, WA, US· patent location history
1992–1996Based in Trabuco Canyon, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NAT SEMICONDUCTOR CORP | 7 | 1991–1996 |
Locations
| Location | Patents | Span |
|---|---|---|
| Trabuco Canyon, California, US | 6 | 1992–1996 |
| Puyallup, Washington, US | 1 | 1991 |