Inventor
Liang-Wen Wu
Inventor
Banciao, TW
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers55%
B82YSpecific uses or applications of nanostructures13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
B05BSpraying apparatus3%
B05DProcesses for applying fluent materials to surfaces, in general3%
C23CCoating metallic material3%
H01LSemiconductor devices3%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution3%
PatentTitleYear
11,033,930Methods and apparatus for cryogenic gas stream assisted SAM-based selective deposition20217,763,902'Light emitting diode chip'20107,692,181'Gallium-nitride based light emitting diode light emitting layer structure'20107,589,350'Light-emitting diode chip'20097,473,939'Light-emitting diode structure with transparent window covering layer of multiple films'20097,442,962'High-brightness gallium-nitride based light emitting diode structure'20087,345,321'High-brightness gallium-nitride based light emitting diode structure'20087,307,291'Gallium-nitride based ultraviolet photo detector'20077,180,097'High-brightness gallium-nitride based light emitting diode structure'20077,180,096'Gallium-nitride based light-emitting diode structure with high reverse withstanding voltage and anti-ESD capability'20077,173,289'Light emitting diode structure having photonic crystals'20077,148,519'Structure of GaN light-emitting diode'20067,105,850'GaN LED structure with p-type contacting layer grown at low-temperature and having low resistivity'20067,087,924'Gallium-nitride based light emitting diode structure with enhanced light illuminance'20067,087,922'Light-emitting diode structure'20067,049,638'High-brightness gallium-nitride based light emitting diode structure'20067,042,019'Gallium-nitride based multi-quantum well light-emitting diode n-type contact layer structure'20067,042,018'Structure of GaN light-emitting diode'20066,979,835'Gallium-nitride based light-emitting diode epitaxial structure'2005Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005–2010Patents assigned to FORMOSA EPITAXY INC (18)· patent assignee history
2005–2010Based in Banciao, TW· patent location history
2007–2010Based in Tao Yuan Shien, TW· patent location history
2009Based in Taoyuan County, TW· patent location history
2021Patents assigned to APPLIED MATERIALS INC (1)· patent assignee history
2021Based in San Jose, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| FORMOSA EPITAXY INC | 18 | 2005–2010 |
| APPLIED MATERIALS INC | 1 | 2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Banciao, TW | 14 | 2005–2010 |
| Tao Yuan Shien, TW | 3 | 2007–2010 |
| San Jose, California, US | 1 | 2021 |
| Taoyuan County, TW | 1 | 2009 |