Inventor
Masaki Funabashi
Inventor
Tokyo, JP
Overview
Patents· 31 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light64%
G02BOptical elements, systems or apparatus18%
B82YSpecific uses or applications of nanostructures16%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein2%
PatentTitleYear
10,938,183Wavelength-variable laser202110,511,150Wavelength-variable laser20199,236,706'Surface-emitting laser apparatus, optical module, and method of driving surface-emitting laser element'20169,054,486'Optical amplifier device'20158,837,869'SOA-PLC hybrid integrated polarization diversity circuit and method for manufacturing the same'20148,811,447'Semiconductor laser with varied-width waveguide and semiconductor laser module including the same'20148,547,631'Semiconductor optical amplifier'20138,532,155'Optical interconnection system'20138,380,032'Semiconductor optical amplifier module'20138,149,891'Semiconductor device and optical module'20127,796,846'Optical integrated device and method of manufacturing the same'20107,561,765'Optical integrated circuit and optical integrated circuit module'20097,453,100'DFB laser assembly and laser module'20087,180,930'DFB semiconductor laser device having ununiform arrangement of a diffraction grating'20077,003,013'Distributed feedback semiconductor laser device'20066,947,463'Semiconductor laser device for use in a laser module'20056,829,277'Distributed feedback semiconductor laser device and laser module'20046,782,022'Semiconductor laser device having improved output power characteristics'20046,782,028'Semiconductor laser device for use in a semiconductor laser module and an optical amplifier'20046,765,935'Semiconductor laser module, manufacturing method thereof and optical amplifier'20046,743,648'Method for fabricating a set of distributed feedback semiconductor lasers'20046,728,288'DFB semiconductor laser device'20046,704,342'Gain-coupled distributed-feedback semiconductor laser device'20046,680,960'Semiconductor laser device having a diffraction grating on a light emission side'20046,674,783'Distributed feedback type semiconductor laser device and method of manufacturing the same'20046,661,828'Semiconductor laser device'20036,643,315'Distributed feedback semiconductor laser device and multi-wavelength laser array'20036,614,823'Semiconductor laser device having a diffraction grating on a light reflection side'20036,580,740'Semiconductor laser device having selective absorption qualities'20036,493,369'Gain-coupling distributed feedback type semiconductor laser device'20026,472,691'Distributed feedback semiconductor laser device'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2021Patents assigned to FURUKAWA ELECTRIC CO LTD (30)· patent assignee history
2002Patents assigned to FURUKAWA ELECTRICAL CO LTD (1)· patent assignee history
2002–2021Based in Tokyo, JP· patent location history
2004Based in Chiyoda-ku, JP· patent location history
2004Based in Yokohama, JP· patent location history
2012–2014Patents assigned to FUNABASHI MASAKI (4)· patent assignee history
2013Patents assigned to HASEGAWA HIDEAKI (2)· patent assignee history
2014Patents assigned to ARAKAWA SATOSHI (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| FURUKAWA ELECTRIC CO LTD | 30 | 2002–2021 |
| FUNABASHI MASAKIself | 4 | 2012–2014 |
| HASEGAWA HIDEAKI | 2 | 2013 |
| ARAKAWA SATOSHI | 1 | 2014 |
| FURUKAWA ELECTRICAL CO LTD | 1 | 2002 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 28 | 2002–2021 |
| Chiyoda-ku, JP | 2 | 2004 |
| Yokohama, JP | 1 | 2004 |