Inventor
Hyun-Sang Hwang
Inventor
Gwangju, KR
Overview
Patents· 27 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices29%
G11CStatic stores16%
H10NElectric solid-state devices not otherwise provided for15%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
H10BElectronic memory devices13%
H01LSemiconductor devices8%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
PatentTitleYear
9,633,727'Resistive memory devices and methods of controlling resistive memory devices according to selected pulse power specifications'20179,231,198'Resistance-variable memory device including carbide-based solid electrolyte membrane and manufacturing method thereof'20169,224,946'Three-terminal synapse device and method of operating the same'20159,214,631'Resistive RAM, method for fabricating the same, and method for driving the same'20159,208,869'Resistive RAM, method for fabricating the same, and method for driving the same'20159,117,513'Resistive RAM, method for fabricating the same, and method for driving the same'20158,902,632'Hybrid resistive memory devices and methods of operating and manufacturing the same'20148,546,861'Resistance change memory device with three-dimensional structure, and device array, electronic product and manufacturing method therefor'20138,116,116'Resistance RAM having oxide layer and solid electrolyte layer, and method for operating the same'20128,009,454'Resistance random access memory device and a method of manufacturing the same'20117,670,916'Semiconductor device doped with Sb, Ga, or Bi and method of manufacturing the same'20107,531,865'Semiconductor device doped with Sb, Ga or Bi and method of manufacturing the same'20097,528,039'Method of fabricating flash memory'20097,456,468'Semiconductor device including high-k insulating layer and method of manufacturing the same'20087,420,256'Nonvolatile semiconductor memory device having a gate stack and method of manufacturing the same'20087,358,137'Memory devices including barrier layers and methods of manufacturing the same'20086,913,961'Method of manufacturing high-k gate dielectric by use of annealing in high-pressure hydrogen atmosphere'20056,797,645'Method of fabricating gate dielectric for use in semiconductor device having nitridation by ion implantation'20046,087,237'Method of manufacturing a MOSFET by forming a single oxide layer doping with either an oxide accelerator or an oxide inhibitor producing asymmetric thickness'20006,077,736'Method of fabricating a semiconductor device'20005,793,080'Nonvolatile memory device'19985,684,317'MOS transistor and method of manufacturing thereof'19975,576,226'Method of fabricating memory device using a halogen implant'19965,459,091'Method for fabricating a non-volatile memory device'19955,445,982'Method of fabricating nonvolatile semiconductor memory device'19955,395,780'Process for fabricating MOS transistor'19955,364,807'Method for fabricating LDD transitor utilizing halo implant'1994Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1994–1995Patents assigned to GOLD STAR ELECTRONICS (4)· patent assignee history
1994–2000Based in Seoul, KR· patent location history
1996–2000Patents assigned to LG SEMICON CO LTD (5)· patent assignee history
2004–2016Patents assigned to KWANGJU INST SCI & TECH (9)· patent assignee history
2008–2017Patents assigned to SAMSUNG ELECTRONICS CO LTD (9)· patent assignee history
2008–2010Based in Gwangju-si, KR· patent location history
2008–2011Based in Yongin-si, KR· patent location history
2009–2016Based in Gwangju, KR· patent location history
2013–2016Patents assigned to HWANG HYUN-SANG (4)· patent assignee history
2015–2017Based in Pohang-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| KWANGJU INST SCI & TECH | 9 | 2004–2016 |
| SAMSUNG ELECTRONICS CO LTD | 9 | 2008–2017 |
| LG SEMICON CO LTD | 5 | 1996–2000 |
| GOLD STAR ELECTRONICS | 4 | 1994–1995 |
| HWANG HYUN-SANGself | 4 | 2013–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Gwangju, KR | 8 | 2009–2016 |
| Seoul, KR | 8 | 1994–2000 |
| Gwangju-si, KR | 4 | 2008–2010 |
| Pohang-si, KR | 2 | 2015–2017 |
| Yongin-si, KR | 2 | 2008–2011 |