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Inventor

Luigi Bonanno

Inventor
Novara, IT

Overview

3→
Patents
2016–2018
Patent span
Chemistry
Primary field (CPC C)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary
C30BSingle-crystal growth38%
Y10TTechnical subjects covered by former us classification25%
H01LSemiconductor devices13%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation13%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution13%
PatentTitleYear
10,060,045Fabrication of indium-doped silicon by the czochralski method201810,006,145Liquid doping systems and methods for controlled doping of single crystal semiconductor material20189,359,691'Method of loading a charge of polysilicon into a crucible'2016

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2016Patents assigned to MEMC ELECTRONIC MATERIALS (1)· patent assignee history
2016Patents assigned to MEMC ELECTRONIC MATERIALS SPA (1)· patent assignee history
2016Based in Merano, IT· patent location history
2018Patents assigned to CORNER STAR LTD (2)· patent assignee history
2018Patents assigned to MEMC ELECTRONIC MAT S P A (1)· patent assignee history
2018Based in Novara, IT· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
CORNER STAR LTD22018
MEMC ELECTRONIC MAT S P A12018
MEMC ELECTRONIC MATERIALS12016
MEMC ELECTRONIC MATERIALS SPA12016
Locations
LocationPatentsSpan
Novara, IT22018
Merano, IT12016