Inventor
Yoshio Yokota
Inventor
Tokyo, JP
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices45%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1045%
LOC139%
PatentTitleYear
D0459705'Semiconductor package'20025,376,815'Semiconductor device having bipolar-mos composite element pellet suitable for pressure contacted structure'19945,223,442'Method of making a semiconductor device of a high withstand voltage'19935,210,601'Compression contacted semiconductor device and method for making of the same'19935,156,981'Method of making a semiconductor device of a high withstand voltage'19925,028,974'Semiconductor switching device with anode shortening structure'19914,996,586'Crimp-type semiconductor device having non-alloy structure'1991Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1991–1994Patents assigned to TOSHIBA KK (6)· patent assignee history
1991–1994Based in Tokyo, JP· patent location history
2002Patents assigned to SHINDENGEN ELECTRIC MFG (1)· patent assignee history
2002Based in Hanno, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOSHIBA KK | 6 | 1991–1994 |
| SHINDENGEN ELECTRIC MFG | 1 | 2002 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 6 | 1991–1994 |
| Hanno, JP | 1 | 2002 |