Inventor
Jiro Yugami
Inventor
Yokohama, JP
Overview
Patents· 33 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices57%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
H10BElectronic memory devices13%
H01LSemiconductor devices5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
C23CCoating metallic material2%
G11CStatic stores2%
PatentTitleYear
10,607,833Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium20209,343,527'Semiconductor device including an isolation film buried in a groove'20168,823,110'Semiconductor device and manufacturing method of the same'20148,796,780'Semiconductor device and manufacturing method thereof'20148,664,053'Semiconductor device with isolation structures and gate insulating film that contain an element for threshold reduction and method of manufacturing the same'20148,552,507'Semiconductor device and method of manufacturing the same'20138,501,558'Semiconductor device and manufacturing method of the same'20138,293,632'Manufacturing method of semiconductor device'20128,120,118'Semiconductor device and manufacturing method of the same'20127,915,686'Semiconductor device and manufacturing of the same'20117,863,125'Manufacturing method of CMOS type semiconductor device, and CMOS type semiconductor device'20117,855,134'Semiconductor device and manufacturing method of the same'20107,741,201'Semiconductor device and method of manufacturing a gate stack'20107,569,890'Manufacturing method of CMOS type semiconductor device, and CMOS type semiconductor device'20097,537,987'Semiconductor device manufacturing method'20097,196,384'Semiconductor device and method for manufacturing thereof'20077,193,281'Semiconductor device and process for producing the same'20077,064,400'Semiconductor device and process for producing the same'20066,982,468'Semiconductor device and method for manufacturing thereof'20066,953,728'Semiconductor device and method of manufacturing thereof'20056,897,104'Semiconductor device and method for manufacturing thereof'20056,849,513'Semiconductor device and production method thereof'20056,833,296'Method of making a MISFET semiconductor device having a high dielectric constant insulating film with tapered end portions'20046,833,582'Nonvolatile semiconductor memory device'20046,777,296'Semiconductor device and manufacturing method thereof'20046,727,146'Semiconductor device and method of manufacturing thereof'20046,723,625'Semiconductor device having thin electrode laye adjacent gate insulator and method of manufacture'20046,710,383'MISFET semiconductor device having a high dielectric constant insulating film with tapered end portions'20046,656,804'Semiconductor device and production method thereof'20036,521,943'Semiconductor device having thin electrode layer adjacent gate insulator and method of manufacture'20036,144,062'Semiconductor device having thin electrode layer adjacent gate insulator and method of manufacture'20005,091,761'Semiconductor device having an arrangement of IGFETs and capacitors stacked thereover'19924,989,056'Semiconductor capacitor'1991Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1991–2005Patents assigned to HITACHI LTD (7)· patent assignee history
1991–2014Based in Tokyo, JP· patent location history
2000–2014Based in Yokohama, JP· patent location history
2004–2010Patents assigned to RENESAS TECH CORP (11)· patent assignee history
2005–2007Patents assigned to HITACHI ULSI SYS CO LTD (3)· patent assignee history
2010–2016Patents assigned to RENESAS ELECTRONICS CORP (11)· patent assignee history
2010Based in Chiyoda-ku, JP· patent location history
2012–2014Patents assigned to YUGAMI JIRO (6)· patent assignee history
2013–2016Based in Kanagawa, JP· patent location history
2020Based in Toyama, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| RENESAS ELECTRONICS CORP | 11 | 2010–2016 |
| RENESAS TECH CORP | 11 | 2004–2010 |
| HITACHI LTD | 7 | 1991–2005 |
| YUGAMI JIROself | 6 | 2012–2014 |
| HITACHI ULSI SYS CO LTD | 3 | 2005–2007 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yokohama, JP | 19 | 2000–2014 |
| Tokyo, JP | 9 | 1991–2014 |
| Kanagawa, JP | 3 | 2013–2016 |
| Toyama, JP | 1 | 2020 |
| Chiyoda-ku, JP | 1 | 2010 |