Inventor
Peter Zurcher
Inventor
Phoenix, AZ, US
Overview
Patents· 15 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices35%
H10BElectronic memory devices19%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1019%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems3%
B82YSpecific uses or applications of nanostructures3%
G06FElectric digital data processing3%
H01FMagnets3%
H03HImpedance networks, e.g. resonant circuits3%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
PatentTitleYear
7,898,059'Semiconductor device comprising passive components'20117,842,587'III-V MOSFET fabrication and device'20107,666,698'Method for forming and sealing a cavity for an integrated MEMS device'20107,535,079'Semiconductor device comprising passive components'20097,429,339'Magnetic nanomaterials and synthesis method'20087,306,986'Method of making a semiconductor device, and semiconductor device made thereby'20076,919,244'Method of making a semiconductor device, and semiconductor device made thereby'20056,870,444'Electromechanical resonator and method of operating same'20056,825,092'Semiconductor device having passive elements and method of making same'20046,500,724'Method of making semiconductor device having passive elements including forming capacitor electrode and resistor from same layer of material'20026,344,413'Method for forming a semiconductor device'20026,010,927'Method for making a ferroelectric device having a tantalum nitride barrier layer'20005,867,405'Ferroelectric simulator, ferroelectric method of manufacture, and method of simulation'19995,773,314'Plug protection process for use in the manufacture of embedded dynamic random access memory (DRAM) cells'19985,716,875'Method for making a ferroelectric device'1998Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1998–2005Patents assigned to MOTOROLA INC (8)· patent assignee history
1998–2000Based in Dripping Springs, TX, US· patent location history
2002–2011Based in Phoenix, AZ, US· patent location history
2002Based in Scottsdale, AZ, US· patent location history
2004–2011Patents assigned to FREESCALE SEMICONDUCTOR INC (7)· patent assignee history
2008Based in Tempe, AZ, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MOTOROLA INC | 8 | 1998–2005 |
| FREESCALE SEMICONDUCTOR INC | 7 | 2004–2011 |
Locations
| Location | Patents | Span |
|---|---|---|
| Phoenix, AZ, US | 9 | 2002–2011 |
| Dripping Springs, Texas, US | 4 | 1998–2000 |
| Tempe, AZ, US | 1 | 2008 |
| Scottsdale, AZ, US | 1 | 2002 |