Inventor
Katsuyuki Nakada
Inventor
Tokyo, JP
Overview
Patents· 31 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices18%
H10NElectric solid-state devices not otherwise provided for18%
G11BInformation storage based on relative movement between record carrier and transducer14%
H01FMagnets11%
G11CStatic stores7%
G01RMeasuring electric variables7%
H10BElectronic memory devices7%
H10DInorganic electric semiconductor devices4%
B82YSpecific uses or applications of nanostructures4%
H03BGeneration of oscillations, directly or by frequency-changing, by circuits employing active elements which operate in a non-switching manner3%
PatentTitleYear
10,825,985Magnetoresistance effect element202010,790,440Magnetoresistance effect element202010,784,438Magnetoresistive effect element202010,783,906Magnetoresistive effect element, magnetic head, sensor, high-frequency filter, and oscillator202010,720,178Magnetoresistance effect element202010,685,671Magnetoresistance effect element202010,665,374Magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillation element202010,665,776Magnetoresistance effect element and method for manufacturing the same202010,629,801Laminated structure and spin modulation element202010,629,796Laminate and thermoelectric conversion element202010,559,749Magnetoresistive effect element202010,505,105Magnetoresistive effect element201910,468,589Magnetoresistance effect element201910,461,244Laminated structure and spin modulation element201910,453,482Magnetoresistive effect element, magnetic head, sensor, high-frequency filter, and oscillator201910,453,598Magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillation element201910,446,740Magnetoresistance effect element201910,355,201Laminated structure and spin modulation element201910,319,904Magnetoresistance effect element201910,263,181Laminated structure and spin modulation element201910,255,934Magnetoresistance effect element201910,243,139Magnetoresistive effect element201910,109,788Magnetoresistance effect element201810,020,445Magnetoresistive effect element20189,362,038'Magnetic element'20169,153,771'Thin film magnetic element having a pair of first soft magnetic layers sandwiching a magnetoresistive effect film and a coil windingly formed about a second soft magnetic layer'20159,017,831'Thin-film magnetic oscillation element'20157,531,103'Mask forming method, mask forming functional layer, dry etching method, and method of manufacturing an information recording medium'20097,417,826'Magnetic recording medium'20087,388,215'Pattern drawing method, stamper manufacturing method, and pattern drawing apparatus'20087,184,382'Energy beam irradiating apparatus'2007Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2007–2020Patents assigned to TDK CORP (30)· patent assignee history
2007–2020Based in Tokyo, JP· patent location history
2008Based in Chuo-ku, JP· patent location history
2020Patents assigned to NAT INST MATERIALS SCIENCE (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TDK CORP | 30 | 2007–2020 |
| NAT INST MATERIALS SCIENCE | 1 | 2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 30 | 2007–2020 |
| Chuo-ku, JP | 1 | 2008 |