Inventor

Christie R. K. Marrian

Inventor
Marbury, MD, US

Overview

21→
Patents
1985–2018
Patent span
Electricity
Primary field (CPC H)

Patents· 21 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices9%
H01JElectric discharge tubes or discharge lamps9%
H10NElectric solid-state devices not otherwise provided for9%
B82YSpecific uses or applications of nanostructures7%
G06NComputing arrangements based on specific computational models6%
H01LSemiconductor devices4%
H05KPrinted circuits4%
H10BElectronic memory devices4%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry3%
PatentTitleYear
10,147,877Method of forming controllably conductive oxide20189,461,247'Method of forming controllably conductive oxide'20169,274,410'Method and system for automated generation of masks for spacer formation from a desired final wafer pattern'20168,946,020'Method of forming controllably conductive oxide'20157,682,866'Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation'20107,038,204'Method for reducing proximity effects in electron beam lithography'20067,038,231'Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation'20067,009,694'Indirect switching and sensing of phase change memory cells'20066,392,242'Fiducial beam position monitor'20026,017,658'Lithographic mask and method for fabrication thereof'20005,825,040'Bright beam method for super-resolution in e-beam lithography'19985,703,373'Alignment fiducial for improving patterning placement accuracy in e-beam masks for x-ray lithography'19975,575,888'Sidewall passivation by oxidation during refractory-metal plasma etching'19965,504,338'Apparatus and method using low-voltage and/or low-current scanning probe lithography'19965,336,892'Method and system for electron beam lithography'19945,171,608'Method of pattern transfer in photolithography using laser induced metallization'19925,113,367'Cross entropy deconvolver circuit adaptable to changing convolution functions'19925,079,600'High resolution patterning on solid substrates'19925,077,085'High resolution metal patterning of ultra-thin films on solid substrates'19914,849,925'Maximum entropy deconvolver circuit based on neural net principles'19894,492,866'Method for predicting the performance of cathode materials'1985

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1985–2002Patents assigned to US NAVY (7)· patent assignee history
1985–1992Based in Alexandria, VA, US· patent location history
1989–2002Based in Marbury, MD, US· patent location history
1991–1992Patents assigned to CALVERT JEFFREY M (2)· patent assignee history
1994–1997Patents assigned to US ARMY (4)· patent assignee history
2006–2010Patents assigned to IBM (4)· patent assignee history
2006–2018Based in San Jose, CA, US· patent location history
2016–2018Patents assigned to CYPRESS SEMICONDUCTOR CORP (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
US NAVY71985–2002
IBM42006–2010
US ARMY41994–1997
CYPRESS SEMICONDUCTOR CORP32016–2018
CALVERT JEFFREY M21991–1992
Locations
LocationPatentsSpan
Marbury, Maryland, US101989–2002
San Jose, California, US82006–2018
Alexandria, Virginia, US31985–1992