Inventor
Michelangelo Delfino
Inventor
Los Altos, CA, US
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
A61NElectrotherapy15%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests13%
H01JElectric discharge tubes or discharge lamps10%
A61LMethods or apparatus for sterilising materials or objects in general8%
H10DInorganic electric semiconductor devices8%
A61FFilters implantable into blood vessels5%
A61KPreparations for medical, dental or toiletry purposes5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
C23CCoating metallic material3%
PatentTitleYear
6,907,106'Method and apparatus for producing radioactive materials for medical treatment using x-rays produced by an electron accelerator'20056,676,595'Radioactive medical implant and method of manufacturing'20046,632,167'Method and apparatus creating a radioactive layer on a receiving substrate for in vivo implantation'20036,626,815'Method and apparatus creating a radioactive layer on a receiving substrate for in vivo implantation'20036,440,487'Radioactive transition metal stents'20026,264,595'Radioactive transition metal stents'20016,129,658'Method and apparatus creating a radioactive layer on a receiving substrate for in vivo implantation'20006,078,644'Carbon-backed x-ray target with coating'20005,789,318'Use of titanium hydride in integrated circuit fabrication'19985,627,105'Plasma etch process and TiSi.sub.x layers made using the process'19975,587,039'Plasma etch equipment'19965,376,223'Plasma etch process'19945,203,631'Narrow spectral band pyrometry'19935,021,358'Semiconductor fabrication process using sacrificial oxidation to reduce tunnel formation during tungsten deposition'19914,686,113'Plasma confinement in a low pressure electrically grounded R.F. heated reactor and deposition method'19874,549,064'Laser treatment of silicon nitride'19854,542,037'Laser induced flow of glass bonded materials'19854,443,493'Laser induced flow glass materials'19844,431,900'Laser induced flow Ge-O based materials'19844,415,794'Laser scanning method for annealing, glass flow and related processes'19833,957,604'Method and apparatus for isothermal crystal growth'1976Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1976Based in Ossining, NY, US· patent location history
1983–1985Patents assigned to FAIRCHILD CAMERA INSTR CO (5)· patent assignee history
1983–1985Based in Mountain View, CA, US· patent location history
1984–2005Based in Los Altos, CA, US· patent location history
1987Patents assigned to FAIRCHILD SEMICONDUCTOR (1)· patent assignee history
1993–2000Patents assigned to VARIAN ASSOCIATES (6)· patent assignee history
2000–2005Patents assigned to VARIAN MED SYS INC (4)· patent assignee history
2001–2002Patents assigned to MOBETA INC (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| VARIAN ASSOCIATES | 6 | 1993–2000 |
| FAIRCHILD CAMERA INSTR CO | 5 | 1983–1985 |
| VARIAN MED SYS INC | 4 | 2000–2005 |
| MOBETA INC | 2 | 2001–2002 |
| FAIRCHILD SEMICONDUCTOR | 1 | 1987 |
Locations
| Location | Patents | Span |
|---|---|---|
| Los Altos, California, US | 18 | 1984–2005 |
| Mountain View, California, US | 2 | 1983–1985 |
| Ossining, New York, US | 1 | 1976 |