Inventor
CHAO-CHING CHENG
Inventor
TW
Overview
Patents· 83 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices24%
H10DInorganic electric semiconductor devices23%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
B82YSpecific uses or applications of nanostructures12%
H10BElectronic memory devices7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
H10NElectric solid-state devices not otherwise provided for6%
G11CStatic stores4%
H10KOrganic electric solid-state devices3%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices1%
PatentTitleYear
12,593,492Electronic device and method for manufacturing the same202612,575,108Memory device, integrated circuit, and manufacturing method of memory device202612,538,548Method of manufacturing a semiconductor device and a semiconductor device202612,439,650CMOS fabrication methods for back-gate transistor202512,426,519Memory devices202512,396,229Semiconductor device202512,389,645Semiconductor structure with extended contact structure202512,389,694Data storage element and manufacturing method thereof202512,376,363Gate stacks for stack-fin channel I/O devices and nanowire channel core devices202512,369,387Semiconductor device and method202512,369,362Forming semiconductor structures with two-dimensional materials202512,364,170Resistive memory devices using a carbon-based conductor line and methods for forming the same202512,363,963Isolation structures of semiconductor devices202512,310,049Semiconductor device structure with nanostructure202512,272,726Semiconductor structure with nanostructure202512,265,323Pellicle for an EUV lithography mask and a method of manufacturing thereof202512,237,425Nanowire stack GAA device with inner spacer and methods for producing the same202512,224,351Semiconductor device and method of manufacturing the same202512,211,931Fin field-effect transistor device with low-dimensional material and method202512,211,895Method of manufacturing a semiconductor device and a semiconductor device202512,199,169Structure and formation method of semiconductor device structure with nanowires202512,199,189Semiconductor device structure202512,174,526Pellicle for an EUV lithography mask and a method of manufacturing thereof202412,170,323Nano transistors with source/drain having side contacts to 2-D material202412,166,113Semiconductor device and method of fabricating the same202412,165,729Semiconductor device including memory cells and method for manufacturing thereof202412,142,533Method of manufacturing a semiconductor device and a semiconductor device202412,062,696Manufacturing method of semiconductor device202412,046,665Forming semiconductor structures with two-dimensional materials202412,040,400Method for forming semiconductor device structure with nanostructure202412,035,532Memory array and memory device202412,027,628Semiconductor device and method202412,022,752Methods of forming memory devices202411,984,476Isolation structures of semiconductor devices202411,967,375Memory cell with built-in amplifying function, memory device and method using the same202411,963,369Memory array with asymmetric bit-line architecture202411,955,527Nano transistors with source/drain having side contacts to 2-D material202411,948,941Semiconductor device, integrated circuit and methods of manufacturing the same202411,929,425Nanowire stack GAA device with inner spacer202411,923,413Semiconductor structure with extended contact structure202411,910,732Resistive memory devices using a carbon-based conductor line and methods for forming the same202411,903,334Memory devices and methods of forming the same202411,860,534Pellicle for an EUV lithography mask and a method of manufacturing thereof202411,854,895Transistors with channels formed of low-dimensional materials and method forming same202311,837,611Data storage element and manufacturing method thereof202311,823,957Method of manufacturing a semiconductor device and a semiconductor device202311,824,106Semiconductor device and method of fabricating the same202311,824,088Method for forming multi-gate semiconductor device202311,777,008Gate-all-around structure and manufacturing method for the same202311,757,045Semiconductor device and method of manufacturing the same202311,749,718Semiconductor device and manufacturing method thereof202311,715,802Nanowire stack GAA device with inner spacer and methods for producing the same202311,677,010Method of manufacturing a semiconductor device and a semiconductor device202311,670,720Semiconductor device and method202311,600,720Forming semiconductor structures with two-dimensional materials202311,594,615Semiconductor device and method of manufacturing the same202311,581,426Semiconductor device and manufacturing method thereof202311,581,421Semiconductor device and method of manufacturing the same202311,482,571Memory array with asymmetric bit-line architecture202211,476,356Fin field-effect transistor device with low-dimensional material and method202211,437,468Isolation structures of semiconductor devices202211,417,729Transistors with channels formed of low-dimensional materials and method forming same202211,393,925Semiconductor device structure with nanostructure202211,380,369Semiconductor device including memory cells and method for manufacturing thereof202211,380,803Semiconductor device structure and method for forming the same202211,349,069Resistive memory devices using a carbon-based conductor line and methods for forming the same202211,335,604Method of manufacturing a semiconductor device and a semiconductor device202211,244,866Low dimensional material device and method202211,245,005Method for manufacturing semiconductor structure with extended contact structure202211,239,354Semiconductor device and method of fabricating the same202211,227,955Semiconductor device and method of manufacturing the same202211,205,706Method of manufacturing a semiconductor device and a semiconductor device202111,195,926Gate-all-around structure and manufacturing method for the same202111,195,763Method of manufacturing a semiconductor device and a semiconductor device202111,183,560Multi-gate semiconductor device202111,183,236Memory cell with built-in amplifying function, memory device and method using the same202111,183,449Cryogenic integrated circuits202111,177,179Method of manufacturing a semiconductor device and a semiconductor device202111,158,742Method of manufacturing a semiconductor device with multilayered channel structure202111,158,807Field effect transistor and method of manufacturing the same202111,152,481Gate stacks for stack-fin channel I/O devices and nanowire channel core devices202111,145,676Memory device and multi-level memory cell having ferroelectric storage element and magneto-resistive storage element202111,139,431Horizontal memory array structure with scavenger layer2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (83)· patent assignee history
2021–2026Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 83 | 2021–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 83 | 2021–2026 |