Inventor
Wu-Song Huang
Inventor
Poughkeepsie, NY, US
Overview
Patents· 109 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G03Fprimary
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices40%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests19%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
Y10TTechnical subjects covered by former us classification3%
C08FMacromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds3%
H01LSemiconductor devices3%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds2%
C09DCoating compositions, e.g. paints, varnishes or lacquers2%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
C08LCompositions of macromolecular compounds2%
PatentTitleYear
9,726,977'Coating compositions suitable for use with an overcoated photoresist'20179,465,290'Near-infrared absorbing film compositions'20169,460,934'Wet strip process for an antireflective coating layer'20169,449,822'Method of forming semiconductor structures with contact holes'20169,348,228'Acid-strippable silicon-containing antireflective coating'20169,337,033'Dielectric tone inversion materials'20169,316,916'Method to mitigate resist pattern critical dimension variation in a double-exposure process'20169,281,212'Dielectric tone inversion materials'20169,235,119'Exposure photolithography methods'20169,069,245'Near-infrared absorptive layer-forming composition and multilayer film'20159,040,225'Developable bottom antireflective coating composition and pattern forming method using thereof'20158,999,625'Silicon-containing antireflective coatings including non-polymeric silsesquioxanes'20158,999,624'Developable bottom antireflective coating composition and pattern forming method using thereof'20158,986,918'Hybrid photoresist composition and pattern forming method using thereof'20158,932,796'Hybrid photoresist composition and pattern forming method using thereof'20158,846,296'Photoresist compositions'20148,846,295'Photoresist composition containing a protected hydroxyl group for negative development and pattern forming method using thereof'20148,802,347'Silicon containing coating compositions and methods of use'20148,772,376'Near-infrared absorbing film compositions'20148,759,220'Patterning process'20148,722,307'Near-infrared absorptive layer-forming composition and multilayer film comprising near-infrared absorptive layer'20148,715,907'Developable bottom antireflective coating compositions for negative resists'20148,609,327'Forming sub-lithographic patterns using double exposure'20138,586,283'Near-infrared absorbing film compositions'20138,568,960'Multiple exposure photolithography methods'20138,557,501'Developable bottom antireflective coating compositions especially suitable for ion implant applications'20138,546,062'Self-forming top anti-reflective coating compositions and, photoresist mixtures and method of imaging using same'20138,546,069'Method for enhancing lithographic imaging of isolated and semi-isolated features'20138,492,079'Method of forming a pattern of an array of shapes including a blocked region'20138,394,573'Photoresist compositions and methods for shrinking a photoresist critical dimension'20138,395,228'Integration process to improve focus leveling within a lot process variation'20138,304,178'Top antireflective coating composition containing hydrophobic and acidic groups'20128,293,451'Near-infrared absorbing film compositions'20128,268,542'Method for reducing side lobe printing using a barrier layer'20128,236,476'Multiple exposure photolithography methods and photoresist compositions'20128,227,180'Photolithography focus improvement by reduction of autofocus radiation transmission into substrate'20128,227,307'Method for removing threshold voltage adjusting layer with external acid diffusion process'20128,182,978'Developable bottom antireflective coating compositions especially suitable for ion implant applications'20128,158,014'Multi-exposure lithography employing differentially sensitive photoresist layers'20128,137,893'Chemical trim of photoresist lines by means of a tuned overcoat'20128,097,401'Self-forming top anti-reflective coating compositions and, photoresist mixtures and method of imaging using same'20128,053,172'Photoresists and methods for optical proximity correction'20118,029,975'Fused aromatic structures and methods for photolithographic applications'20118,021,828'Photoresist compositions and methods related to near field masks'20117,960,095'Use of mixed bases to enhance patterned resist profiles on chrome or sensitive substrates'20117,944,055'Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structures'20117,901,864'Radiation-sensitive composition and method of fabricating a device using the radiation-sensitive composition'20117,862,982'Chemical trim of photoresist lines by means of a tuned overcoat material'20117,838,200'Photoresist compositions and method for multiple exposures with multiple layer resist systems'20107,838,198'Photoresist compositions and method for multiple exposures with multiple layer resist systems'20107,816,068'Underlayer compositions containing heterocyclic aromatic structures'20107,807,332'Underlayer compositions containing heterocyclic aromatic structures'20107,803,521'Photoresist compositions and process for multiple exposures with multiple layer photoresist systems'20107,754,820'Fluorinated half ester of maleic anhydride polymers for dry 193 nm top antireflective coating application'20107,709,187'High resolution imaging process using an in-situ image modifying layer'20107,709,370'Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structures'20107,659,050'High resolution silicon-containing resist'20107,638,266'Ultrathin polymeric photoacid generator layer and method of fabricating at least one of a device and a mask by using said layer'20097,608,390'Top antireflective coating composition containing hydrophobic and acidic groups'20097,566,527'Fused aromatic structures and methods for photolithographic applications'20097,560,222'Si-containing polymers for nano-pattern device fabrication'20097,544,750'Top antireflective coating composition with low refractive index at 193nm radiation wavelength'20097,501,353'Method of formation of a damascene structure utilizing a protective film'20097,439,302'Low refractive index polymers as underlayers for silicon-containing photoresists'20087,435,537'Fluorinated half ester of maleic anhydride polymers for dry 193 nm top antireflective coating application'20087,407,736'Methods of improving single layer resist patterning scheme'20087,399,573'Method for using negative tone silicon-containing resist for e-beam lithography'20087,375,172'Underlayer compositions containing heterocyclic aromatic structures'20087,326,523'Low refractive index polymers as underlayers for silicon-containing photoresists'20087,320,855'Silicon containing TARC/barrier layer'20087,314,700'High sensitivity resist compositions for electron-based lithography'20087,300,741'Advanced chemically amplified resist for sub 30 nm dense feature resolution'20077,276,327'Silicon-containing compositions for spin-on arc/hardmask materials'20077,270,931'Silicon-containing compositions for spin-on ARC/hardmask materials'20077,168,224'Method of making a packaged radiation sensitive resist film-coated workpiece'20077,141,692'Molecular photoresists containing nonpolymeric silsesquioxanes'20067,090,963'Process for forming features of 50 nm or less half-pitch with chemically amplified resist imaging'20066,939,664'Low-activation energy silicon-containing resist system'20056,821,718'Radiation sensitive silicon-containing negative resists and use thereof'20046,730,454'Antireflective SiO-containing compositions for hardmask layer'20046,689,540'Polymers and use thereof'20046,653,045'Radiation sensitive silicon-containing negative resists and use thereof'20036,641,971'Resist compositions comprising silyl ketals and methods of use thereof'20036,586,156'Etch improved resist systems containing acrylate (or methacrylate) silane monomers'20036,543,617'Packaged radiation sensitive coated workpiece process for making and method of storing same'20036,503,692'Antireflective silicon-containing compositions as hardmask layer'20036,420,084'Mask-making using resist having SIO bond-containing polymer'20026,420,088'Antireflective silicon-containing compositions as hardmask layer'20026,346,362'Polymers and use thereof'20026,338,934'Hybrid resist based on photo acid/photo base blending'20026,303,263'Irradiation sensitive positive-tone resists using polymers containing two acid sensitive protecting groups'20016,300,035'Chemically amplified positive photoresists'20016,268,436'Approach to formulating irradiation sensitive positive resists'20016,245,492'Photoresist system and process for aerial image enhancement'20016,203,965'Photoresist comprising blends of photoacid generators'20016,200,726'Optimization of space width for hybrid photoresist'20016,103,447'Approach to formulating irradiation sensitive positive resists'20006,043,003'E-beam application to mask making using new improved KRS resist system'20006,037,097'E-beam application to mask making using new improved KRS resist system'20005,919,597'Methods for preparing photoresist compositions'19995,733,705'Acid Scavengers for use in chemically amplified photoresists'19985,712,078'High contrast photoresists comprising acid sensitive crosslinked polymeric resins'19985,667,938'Acid scavengers for use in chemically amplified photoresists'19975,609,989'Acid scavengers for use in chemically amplified photoresists'19975,300,208'Fabrication of printed circuit boards using conducting polymer'19945,202,061'Electrically conductive polymeric materials and uses thereof'19935,200,112'Electrically conductive polymeric materials and uses thereof'19935,198,153'Electrically conductive polymeric'19935,062,896'Solder/polymer composite paste and method'1991Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1991–2016Patents assigned to IBM (100)· patent assignee history
1991–2016Based in Poughkeepsie, NY, US· patent location history
2006Based in Dobbs Ferry, NY, US· patent location history
2010–2017Based in Brewster, NY, US· patent location history
2011–2016Based in Hopewell Junction, NY, US· patent location history
2012–2016Patents assigned to HUANG WU-SONG (29)· patent assignee history
2012–2016Patents assigned to LI WAI-KIN (16)· patent assignee history
2012–2016Patents assigned to CHEN KUANG-JUNG (15)· patent assignee history
2012–2015Patents assigned to LIU SEN (10)· patent assignee history
2012Based in Armonk, NY, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 100 | 1991–2016 |
| HUANG WU-SONGself | 29 | 2012–2016 |
| LI WAI-KIN | 16 | 2012–2016 |
| CHEN KUANG-JUNG | 15 | 2012–2016 |
| LIU SEN | 10 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Poughkeepsie, New York, US | 63 | 1991–2016 |
| Brewster, New York, US | 34 | 2010–2017 |
| Hopewell Junction, New York, US | 10 | 2011–2016 |
| Armonk, New York, US | 1 | 2012 |
| Dobbs Ferry, New York, US | 1 | 2006 |