Inventor
KUEI-LUN LIN
Inventor
TW
Overview
Patents· 14 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices36%
H01LSemiconductor devices23%
B82YSpecific uses or applications of nanostructures21%
H10BElectronic memory devices8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
PatentTitleYear
12,417,918Semiconductor device having doped gate dielectric layer and method for forming the same202512,336,251Formation of transistor gates202512,302,627Semiconductor device with non-conformal gate dielectric layers202512,272,557Semiconductor device and method202512,171,091Multi-layer high-k gate dielectric structure202412,170,321Fin field effect transistor having conformal and non-conformal gate dielectric layers202412,051,594Method for forming semiconductor device structure with gate202412,041,760Multi-layer high-k gate dielectric structure202412,022,643Multi-layer high-k gate dielectric structure202412,015,066Triple layer high-k gate dielectric stack for workfunction engineering202411,908,745Semiconductor device with non-conformal gate dieletric layers202411,901,436Formation of transistor gates202411,862,468Semiconductor device and method202411,605,563Semiconductor device with non-conformal gate dielectric layers2023Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2023–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (14)· patent assignee history
2023–2025Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 14 | 2023–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 14 | 2023–2025 |