Inventor
Ok-hyun Nam
Inventor
Seoul, KR
Overview
Patents· 14 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers24%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light12%
B82YSpecific uses or applications of nanostructures6%
G02BOptical elements, systems or apparatus6%
H01LSemiconductor devices6%
H04NPictorial communication, e.g. television6%
H10DInorganic electric semiconductor devices6%
B01LChemical or physical laboratory apparatus for general use3%
C23CCoating metallic material3%
PatentTitleYear
9,153,737'High-quality non-polar/semi-polar semiconductor device on porous nitride semiconductor and manufacturing method thereof'20159,099,609'Method of forming a non-polar/semi-polar semiconductor template layer on unevenly patterned substrate'20158,262,227'Laser display device employing blue laser diode'20127,934,835'Laser display device including first and second scanners'20117,616,674'Semiconductor laser diode array'20097,285,857'GaN-based III—V group compound semiconductor device and p-type electrode for the same'20076,901,097'Semiconductor laser diode and method for fabricating the same'20056,744,064'Nitride semiconductor light emitting device'20046,608,327'Gallium nitride semiconductor structure including laterally offset patterned layers'20036,602,763'Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth'20036,570,192'Gallium nitride semiconductor structures including lateral gallium nitride layers'20036,555,167'Method for growing high quality group-III nitride thin film by metal organic chemical vapor deposition'20036,500,747'Method of manufacturing GaN semiconductor substrate'20026,051,849'Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2003Patents assigned to UNIV NORTH CAROLINA STATE (4)· patent assignee history
2000–2015Based in Seoul, KR· patent location history
2002–2004Patents assigned to SAMSUNG ELECTRO MECH (3)· patent assignee history
2003Based in Kyungki-do, KR· patent location history
2005–2009Patents assigned to SAMSUNG ELECTRONICS CO LTD (2)· patent assignee history
2011–2012Based in Yongin-si, KR· patent location history
2015Patents assigned to KOREA POLYTECH UNIV IND ACAD (2)· patent assignee history
2015Patents assigned to NAM OK HYUN (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNIV NORTH CAROLINA STATE | 4 | 2000–2003 |
| SAMSUNG ELECTRO MECH | 3 | 2002–2004 |
| KOREA POLYTECH UNIV IND ACAD | 2 | 2015 |
| NAM OK HYUNself | 2 | 2015 |
| SAMSUNG ELECTRONICS CO LTD | 2 | 2005–2009 |
Locations
| Location | Patents | Span |
|---|---|---|
| Seoul, KR | 11 | 2000–2015 |
| Yongin-si, KR | 2 | 2011–2012 |
| Kyungki-do, KR | 1 | 2003 |