LexDanaLexDanabeta
Inventor

Shosuke Fujii

Inventor
Kuwana, JP

Overview

56→
Patents
2011–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 56 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices26%
H01LSemiconductor devices25%
H10NElectric solid-state devices not otherwise provided for23%
G11CStatic stores12%
H10DInorganic electric semiconductor devices8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h101%
C23CCoating metallic material1%
H01BCables1%
PatentTitleYear
10,833,103Semiconductor memory device202010,784,312Semiconductor memory device202010,249,818Memory element201910,153,326Memory device201810,103,328Nonvolatile memory device201810,096,619Semiconductor device, manufacturing method for semiconductor device, and ferroelectric layer201810,038,032Semiconductor memory device, semiconductor device, and method for manufacturing the same20189,997,569Memory device20189,954,167Memory device including a layer including hafnium oxide and method for manufacturing the same20189,947,6853D non-volatile memory array utilizing metal ion source20189,928,908'Resistance-change memory operating with read pulses of opposite polarity'20189,882,127'Nonvolatile resistance change element'20189,865,809'Nonvolatile resistance change element'20189,842,990'Semiconductor memory device and method for manufacturing the same'20179,805,927'Nonvolatile semiconductor memory device'20179,779,797'Non-volatile memory device'20179,761,798'Storage device'20179,680,094'Memory device and method for manufacturing the same'20179,634,248'Insulator and memory device'20179,601,192'Resistance-change memory having on-state, off-state, and intermediate state'20179,472,756'Nonvolatile memory device'20169,412,937'Memory device'20169,406,882'Nonvolatile resistance change element'20169,391,272'Nonvolatile variable resistance element'20169,373,631'Nonvolatile semiconductor memory device'20169,305,646'Semiconductor memory device'20169,230,975'Nonvolatile semiconductor memory device'20169,219,229'Resistance change device and memory cell array'20159,202,845'Memory device having a stacked variable resistance layer'20159,190,454'Memory device'20159,190,615'Resistance random access memory device'20159,147,469'Nonvolatile semiconductor memory device including variable resistance element'20159,117,848'Nonvolatile semiconductor memory device and method of manufacturing the same'20159,099,645'Resistance random access memory device'20159,087,715'Nonvolatile semiconductor memory device and method of manufacturing the same'20159,082,973'Resistance random access memory device'20159,053,786'Resistance-change memory'20159,040,949'Information recording device and method of manufacturing the same'20159,024,287'Memory device'20158,987,807'Nonvolatile semiconductor memory device and method of manufacturing the same'20158,981,461'Nonvolatile semiconductor memory device and method of manufacturing the same'20158,975,611'Nonvolatile variable resistance device having a semiconductor layer with higher percentage of unterminated semiconductor element than adjacent layers'20158,971,106'Nonvolatile semiconductor memory device including variable resistance element'20158,916,848'Resistance change device and memory cell array'20148,860,182'Resistance random access memory device'20148,854,874'Nonvolatile semiconductor memory device including variable resistance element'20148,835,896'Nonvolatile variable resistance element'20148,710,580'Semiconductor device and method of manufacturing the same'20148,698,277'Nonvolatile variable resistance device having metal halogen or metal sulfide layer'20148,698,313'Nonvolatile semiconductor memory apparatus'20148,664,632'Memory device'20148,610,101'Nonvolatile variable resistance element having a variable resistive layer disposed between first and second electrodes'20138,569,823'Semiconductor device and manufacturing method thereof'20138,450,709'Nonvolatile resistance change device'20138,278,644'Switching device and nonvolatile memory device'20127,956,405'Semiconductor storage element and manufacturing method thereof'2011

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2011–2017Patents assigned to TOSHIBA KK (39)· patent assignee history
2011–2015Based in Yokohama, JP· patent location history
2012–2017Patents assigned to FUJII SHOSUKE (14)· patent assignee history
2012–2017Based in Kanagawa, JP· patent location history
2013–2015Patents assigned to MATSUSHITA DAISUKE (4)· patent assignee history
2013–2016Patents assigned to ICHIHARA REIKA (3)· patent assignee history
2014–2018Based in Fujisawa, JP· patent location history
2015–2020Based in Kuwana, JP· patent location history
2017–2020Patents assigned to TOSHIBA MEMORY CORP (17)· patent assignee history
2020Based in Kuwana-shi, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK392011–2017
TOSHIBA MEMORY CORP172017–2020
FUJII SHOSUKEself142012–2017
MATSUSHITA DAISUKE42013–2015
ICHIHARA REIKA32013–2016
Locations
LocationPatentsSpan
Kuwana, JP192015–2020
Fujisawa, JP142014–2018
Kanagawa, JP122012–2017
Yokohama, JP82011–2015
Kuwana-shi, JP12020