LexDanaLexDanabeta
Inventor

Yasushi Mizusawa

Inventor
Yamanashi, JP

Overview

28→
Patents
2001–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 28 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1026%
C23CCoating metallic material23%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
H01LSemiconductor devices10%
H01JElectric discharge tubes or discharge lamps8%
B01DSeparation2%
Y02CCapture, storage, sequestration or disposal of greenhouse gases [ghg]2%
B07CPostal sorting1%
C30BSingle-crystal growth1%
F15DFluid dynamics, i.e. methods or means for influencing the flow of gases or liquids1%
PatentTitleYear
10,734,220Method for manufacturing silicon epitaxial wafer and method for manufacturing semiconductor device202010,643,908Manufacturing method and evaluation method of silicon epitaxial wafer20209,976,217Film forming method using reversible decomposition reaction20189,896,761'Trap assembly in film forming apparatus'20189,576,850'Method for manufacturing semiconductor device'20179,062,374'Method for film formation, apparatus for film formation, and computer-readable recording medium'20159,064,690'Method for forming Cu wiring'20158,999,841'Semiconductor device manufacturing method'20158,992,686'Mounting table structure, film forming apparatus and raw material recovery method'20158,962,352'Method for calculating warpage of bonded SOI wafer and method for manufacturing bonded SOI wafer'20158,859,422'Method of forming copper wiring and method and system for forming copper film'20148,440,563'Film forming method and processing system'20138,408,025'Raw material recovery method and trapping mechanism for recovering raw material'20138,399,353'Methods of forming copper wiring and copper film, and film forming system'20138,372,739'Diffusion barrier for integrated circuits formed from a layer of reactive metal and method of fabrication'20138,277,889'Film formation method and film formation apparatus'20128,273,409'Method for film formation, apparatus for film formation, and computer-readable recording medium'20128,268,078'Method and apparatus for reducing particle contamination in a deposition system'20128,043,871'Method for forming oxide film on silicon wafer'20118,034,406'Integrated substrate processing in a vacuum processing tool'20118,029,873'Film deposition method and film deposition apparatus of metal film'20118,026,176'Film forming method, plasma film forming apparatus and storage medium'20117,959,985'Method of integrating PEALD Ta-containing films into Cu metallization'20117,935,393'Method and system for improving sidewall coverage in a deposition system'20117,799,681'Method for forming a ruthenium metal cap layer'20107,790,626'Plasma sputtering film deposition method and equipment'20106,451,682'Method of forming interconnect film'20026,299,739'Method of forming metal wiring film'2001

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2001–2002Based in Susono, JP· patent location history
2010–2018Patents assigned to TOKYO ELECTRON LTD (22)· patent assignee history
2010–2018Based in Yamanashi, JP· patent location history
2010–2012Based in Albany, NY, US· patent location history
2011–2020Based in Annaka, JP· patent location history
2012–2015Patents assigned to MIZUSAWA YASUSHI (12)· patent assignee history
2012–2015Patents assigned to GOMI ATSUSHI (9)· patent assignee history
2012–2015Patents assigned to HARA MASAMICHI (8)· patent assignee history
2012–2015Patents assigned to HATANO TATSUO (8)· patent assignee history
2012–2018Based in Nirasaki, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOKYO ELECTRON LTD222010–2018
MIZUSAWA YASUSHIself122012–2015
GOMI ATSUSHI92012–2015
HARA MASAMICHI82012–2015
HATANO TATSUO82012–2015
Locations
LocationPatentsSpan
Yamanashi, JP72010–2018
Nirasaki, JP72012–2018
Albany, New York, US72010–2012
Annaka, JP42011–2020
Susono, JP22001–2002