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Inventor

Feng Yang

Inventor
Shenzhen, CN

Overview

2→
Patents
2004–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H04Bprimary
H04BTransmission20%
H04LTransmission of digital information, e.g. telegraphic communication20%
H04WWireless communication networks20%
H10DInorganic electric semiconductor devices20%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
PatentTitleYear
11,108,438Method and apparatus for processing uplink frequency shift of communication system20216,703,282'Method of reducing NMOS device current degradation via formation of an HTO layer as an underlying component of a nitride-oxide sidewall spacer'2004

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2004Patents assigned to TAIWAN SEMICONDUCTOR MFG (1)· patent assignee history
2004Based in Fengshan, TW· patent location history
2021Patents assigned to XIAN ZHONGXING NEW SOFTWARE CO LTD (1)· patent assignee history
2021Patents assigned to ZTE CORP (1)· patent assignee history
2021Based in Shenzhen, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG12004
XIAN ZHONGXING NEW SOFTWARE CO LTD12021
ZTE CORP12021
Locations
LocationPatentsSpan
Shenzhen, CN12021
Fengshan, TW12004