Inventor

Hiroaki Tsunoda

Inventor

Yokkaichi, JP

Overview

1996–2012

Patent span

Electricity

Primary field (CPC H)

Patents· 39 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary

H10BElectronic memory devices40%

H10DInorganic electric semiconductor devices34%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%

B64GCosmonautics3%

E04BGeneral building constructions1%

H01QAntennas, i.e. radio aerials1%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h101%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests1%

PatentTitleYear

8,319,270'Semiconductor device and method for manufacturing the same'2012 7,928,500'Semiconductor device'2011 7,795,667'Semiconductor memory preventing an electric short circuit between a word line and a semiconductor substrate, and manufacturing method for the semiconductor memory'2010 7,786,013'Method of fabricating semiconductor device'2010 7,754,568'Semiconductor device and method of fabricating the same'2010 7,586,786'Nonvolatile semiconductor memory'2009 7,582,928'Nonvolatile semiconductor memory device and its manufacturing method'2009 7,572,713'Method of fabricating semiconductor device with STI structure'2009 7,557,422'Semiconductor device with STI structure'2009 7,488,646'Nonvolatile semiconductor memory device and its manufacturing method'2009 7,382,015'Semiconductor device including an element isolation portion having a recess'2008 7,382,649'Nonvolatile semiconductor memory'2008 7,381,641'Semiconductor device and method for fabricating the same'2008 7,368,342'Semiconductor device and method of manufacturing the same'2008 7,265,022'Method of fabricating semiconductor device with STI structure'2007 7,166,889'Semiconductor memory device having a gate electrode and a method of manufacturing thereof'2007 7,095,093'Semiconductor device and method of manufacturing a semiconductor device'2006 7,067,380'Semiconductor device and manufacturing method therefor'2006 7,026,683'Nonvolatile semiconductor memory device having grooves isolating the floating electrodes of memory cells and method of manufacturing the nonvolatile semiconductor memory device'2006 6,987,047'Method of manufacturing a nonvolatile semiconductor memory device having a stacked gate structure'2006 6,984,858'Semiconductor device and manufacturing method thereof'2006 6,974,746'Method of manufacturing a nonvolatile semiconductor memory device having a stacked gate structure'2005 6,953,962'Nonvolatile memory device having a gate electrode'2005 6,933,194'Method of manufacturing semiconductor device using STI technique'2005 6,927,132'Method for producing nonvolatile semiconductor memory device and the device itself'2005 6,869,845'Semiconductor memory device having a memory region and a peripheral region, and a manufacturing method thereof'2005 6,791,510'Inflatable structure, array antenna with inflatable structure, and deployment method for inflatable structure'2004 6,770,932'Semiconductor memory device having a memory region and a peripheral region, and a manufacturing method thereof'2004 6,720,610'Nonvolatile semiconductor memory device and its manufacturing method'2004 6,642,568'Semiconductor device and method of manufacturing the same'2003 6,462,373'Nonvolatile semiconductor memory device having tapered portion on side wall of charge accumulation layer'2002 6,291,886'Semiconductor device having wirings with reflection preventing film and method of manufacturing the same'2001 6,100,579'Insulating film for use in semiconductor device'2000 5,931,420'Deployable truss structure'1999 5,880,498'Semiconductor device having a nitrogen doped polysilicon layer'1999 5,698,464'Method of manufacturing a semiconductor device with oxynitride layer'1997 5,541,129'Method of making non-volatile memory device'1996 5,518,943'Method of manufacturing nonvolatile semiconductor memory device having an implanted damage layer'1996 5,514,896'Nonvolatile semiconductor memory device'1996

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1996–2012Patents assigned to TOSHIBA KK (37)· patent assignee history

1996–1997Based in Kawasaki, JP· patent location history

1999Patents assigned to ADVANCED SPACE COMMUNICATIONS (1)· patent assignee history

1999Patents assigned to MITSUBISHI ELECTRIC CORP (1)· patent assignee history

1999–2012Based in Yokohama, JP· patent location history

1999–2004Based in Tokyo, JP· patent location history

2002–2010Based in Yokkaichi, JP· patent location history

2004–2010Based in Mie, JP· patent location history

2012Patents assigned to ARAI FUMITAKA (1)· patent assignee history

2012Patents assigned to MARUYAMA TOHRU (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TOSHIBA KK	37	1996–2012
ADVANCED SPACE COMMUNICATIONS	1	1999
ARAI FUMITAKA	1	2012
MARUYAMA TOHRU	1	2012
MITSUBISHI ELECTRIC CORP	1	1999

Locations

Location	Patents	Span
Yokkaichi, JP	19	2002–2010
Mie, JP	8	2004–2010
Yokohama, JP	4	1999–2012
Tokyo, JP	3	1999–2004
Kawasaki, JP	3	1996–1997