Inventor
Jeong-Ho Lyu
Inventor
San Jose, CA, US
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Fprimary
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation45%
H01LSemiconductor devices21%
H04NPictorial communication, e.g. television13%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution8%
H10DInorganic electric semiconductor devices5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
PatentTitleYear
10,134,788Dual VPIN HDR image sensor pixel20189,711,546'Image sensor pixel for high dynamic range image sensor'20179,666,631'Photodiode and filter configuration for high dynamic range image sensor'20179,608,019'Image sensor pixel for high dynamic range image sensor'20179,324,759'Image sensor pixel for high dynamic range image sensor'20169,160,958'Method of reading out an image sensor with transfer gate boost'20159,007,504'Method, apparatus and system for reducing pixel cell noise'20158,817,154'Image sensor with fixed potential output transistor'20148,716,768'Transistor with self-aligned channel width'20148,686,477'Ground contact structure for a low dark current CMOS pixel cell'20148,642,374'Image sensor with reduced noise by blocking nitridation using photoresist'20148,324,550'High dynamic range imaging systems'20127,898,584'Image sensors for reducing flicker and methods of manufacturing the same'20117,749,831'Methods for fabricating solid state image sensor devices having non-planar transistors'20107,741,143'Image sensor having 3-dimensional transfer transistor and its method of manufacture'20107,535,037'Solid state image sensor devices having non-planar transistors'20097,364,960'Methods for fabricating solid state image sensor devices having non-planar transistors'20085,747,356'Method for manufacturing ISRC MOSFET'1998Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1998Based in Seoul, KR· patent location history
2008–2011Patents assigned to SAMSUNG ELECTRONICS CO LTD (5)· patent assignee history
2008–2011Based in Suwon-si, KR· patent location history
2010Based in Gyeonggi-do, KR· patent location history
2012Patents assigned to APTINA IMAGING CORP (1)· patent assignee history
2012–2018Based in San Jose, CA, US· patent location history
2014–2018Patents assigned to OMNIVISION TECH INC (11)· patent assignee history
2014–2015Patents assigned to LYU JEONG-HO (5)· patent assignee history
2014–2015Patents assigned to MANABE SOHEI (5)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| OMNIVISION TECH INC | 11 | 2014–2018 |
| LYU JEONG-HOself | 5 | 2014–2015 |
| MANABE SOHEI | 5 | 2014–2015 |
| SAMSUNG ELECTRONICS CO LTD | 5 | 2008–2011 |
| APTINA IMAGING CORP | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Jose, California, US | 12 | 2012–2018 |
| Suwon-si, KR | 4 | 2008–2011 |
| Gyeonggi-do, KR | 1 | 2010 |
| Seoul, KR | 1 | 1998 |