Inventor

Shintaro Yamamichi

Inventor

Tokyo, JP

Overview

1993–2018

Patent span

Electricity

Primary field (CPC H)

Patents· 65 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Wprimary

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1032%

H05KPrinted circuits14%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%

H10DInorganic electric semiconductor devices9%

H10BElectronic memory devices8%

H01LSemiconductor devices7%

Y10TTechnical subjects covered by former us classification4%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%

C23CCoating metallic material2%

G11CStatic stores2%

PatentTitleYear

10,098,179Electronic device2018 9,520,375'Method of forming a solder bump on a substrate'2016 9,362,263'Semiconductor device'2016 9,362,262'Semiconductor device'2016 9,324,663'Semiconductor device including a plurality of magnetic shields'2016 9,172,028'Semiconductor device'2015 9,165,879'Semiconductor device'2015 9,117,814'Semiconductor device'2015 8,975,150'Semiconductor device manufacturing method'2015 8,929,090'Functional element built-in substrate and wiring substrate'2015 8,872,334'Method for manufacturing semiconductor device'2014 8,815,678'Method for fabricating a metal-insulator-metal (MIM) capacitor having capacitor dielectric layer formed by atomic layer deposition (ALD)'2014 8,810,008'Semiconductor element-embedded substrate, and method of manufacturing the substrate'2014 8,766,440'Wiring board with built-in semiconductor element'2014 8,749,033'Semiconductor device and method of manufacturing semiconductor device'2014 8,710,639'Semiconductor element-embedded wiring substrate'2014 8,710,669'Semiconductor device manufacture in which minimum wiring pitch of connecting portion wiring layer is less than minimum wiring pitch of any other wiring layer'2014 8,692,364'Semiconductor device and method for manufacturing the same'2014 8,692,135'Wiring board capable of containing functional element and method for manufacturing same'2014 8,569,892'Semiconductor device and manufacturing method thereof'2013 8,552,570'Wiring board, semiconductor device, and method for manufacturing wiring board and semiconductor device'2013 8,536,691'Semiconductor device and method for manufacturing the same'2013 8,389,414'Method of manufacturing a wiring board'2013 8,344,498'Semiconductor device'2013 8,304,915'Semiconductor device and method for manufacturing the same'2012 8,212,299'Semiconductor device having a thin film capacitor of a MIM (metal-insulator-metal) structure'2012 8,198,140'Wiring substrate for mounting semiconductors, method of manufacturing the same, and semiconductor package'2012 8,169,013'Metal-insulator-metal (MIM) capacitor having capacitor dielectric material selected from a group consisting of ZRO2, HFO2, (ZRX, HF1-X)O2 (0<x<1), (ZRy, Ti (O<y<1), (Hfz, Ti-z)O2 (O<z<1) and (Zrk, Ti1, Hfm)O2 (O<K, 1, m<1, K+1+m=1)'2012 8,072,073'Semiconductor device and method of manufacturing same'2011 8,050,050'Wiring board, semiconductor device, and method of manufacturing the same'2011 8,043,953'Semiconductor device including an LSI chip and a method for manufacturing the same'2011 8,039,756'Multilayered wiring board, semiconductor device in which multilayered wiring board is used, and method for manufacturing the same'2011 8,035,217'Semiconductor device and method for manufacturing same'2011 8,030,201'Semiconductor device and method of manufacturing the same'2011 8,004,074'Semiconductor device and fabrication method'2011 8,004,085'Semiconductor device and method of manufacturing semiconductor device'2011 7,999,401'Semiconductor device and method of manufacturing same'2011 7,911,038'Wiring board, semiconductor device using wiring board and their manufacturing methods'2011 7,889,514'Wiring board, semiconductor device, and method of manufacturing the same'2011 7,880,295'Wiring board, semiconductor device in which wiring board is used, and method for manufacturing the same'2011 7,838,779'Wiring board, method for manufacturing same, and semiconductor package'2010 7,816,782'Wiring substrate for mounting semiconductors, method of manufacturing the same, and semiconductor package'2010 7,791,186'Wiring board, semiconductor device in which wiring board is used, and method for manufacturing the same'2010 7,745,736'Interconnecting substrate and semiconductor device'2010 7,701,726'Method of manufacturing a wiring substrate and semiconductor device'2010 7,674,989'Wiring board and method for manufacturing the same'2010 7,652,375'Semiconductor device and method of manufacturing the same'2010 7,649,749'Wiring substrate, semiconductor device, and method of manufacturing the same'2010 7,348,673'Semiconductor device'2008 6,949,815'Semiconductor device with decoupling capacitors mounted on conductors'2005 6,818,469'Thin film capacitor, method for manufacturing the same and printed circuit board incorporating the same'2004 6,703,705'Semiconductor device and method for packaging same'2004 6,524,905'Semiconductor device, and thin film capacitor'2003 6,515,324'Capacitor, capacitor mounting structure, method for manufacturing same, semiconductor device, and method for manufacturing same'2003 6,292,352'Thin film capacitor'2001 6,225,133'Method of manufacturing thin film capacitor'2001 5,943,547'Method of forming highly-integrated thin film capacitor with high dielectric constant layer'1999 5,883,781'Highly-integrated thin film capacitor with high dielectric constant layer'1999 5,847,423'Semiconductor device having a thin film capacitor and a resistance measuring element'1998 5,670,408'Thin film capacitor with small leakage current and method for fabricating the same'1997 5,539,613'Compact semiconductor device including a thin film capacitor of high reliability'1996 5,530,279'Thin film capacitor with small leakage current and method for fabricating the same'1996 5,366,920'Method for fabricating a thin film capacitor'1994 5,332,684'Method for fabricating thin-film capacitor with restrained leakage current at side and end portions of electrodes in a semiconductor integrated circuit device'1994 5,262,920'Thin film capacitor'1993

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1993–2015Patents assigned to NEC CORP (49)· patent assignee history

1993–2015Based in Tokyo, JP· patent location history

2011–2018Patents assigned to RENESAS ELECTRONICS CORP (27)· patent assignee history

2011–2015Patents assigned to YAMAMICHI SHINTARO (21)· patent assignee history

2011–2015Patents assigned to KIKUCHI KATSUMI (13)· patent assignee history

2011–2015Based in Minato-ku, JP· patent location history

2012–2015Patents assigned to MORI KENTARO (13)· patent assignee history

2014–2018Based in Kanagawa, JP· patent location history

2016Based in Kunitachi, JP· patent location history

2016Based in Kawasaki, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
NEC CORP	49	1993–2015
RENESAS ELECTRONICS CORP	27	2011–2018
YAMAMICHI SHINTAROself	21	2011–2015
KIKUCHI KATSUMI	13	2011–2015
MORI KENTARO	13	2012–2015

Locations

Location	Patents	Span
Tokyo, JP	51	1993–2015
Kanagawa, JP	7	2014–2018
Minato-ku, JP	5	2011–2015
Kunitachi, JP	1	2016
Kawasaki, JP	1	2016