Inventor

Dong Joon Kim

Inventor

Seoul, KR

Overview

1992–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 59 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Hprimary

H10HInorganic light-emitting semiconductor devices having potential barriers19%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%

H01LSemiconductor devices6%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%

B81BMicrostructural devices or systems, e.g. micromechanical devices3%

B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems3%

B82YSpecific uses or applications of nanostructures3%

G01RMeasuring electric variables3%

G11CStatic stores3%

PatentTitleYear

10,991,852Transparent light-emitting display film, method of manufacturing the same, and transparent light-emitting signage using the same2021 10,892,438Organic light-emitting display device having an upper substrate formed by a metal and method of fabricating the same2021 10,826,228Connector2020 10,532,040Methods of treating cancer with herbacetin2020 10,263,037Electronic device2019 10,256,396Magnetic sensor and method of fabricating the same2019 9,847,376Electronic device2017 9,419,206'Magnetic sensor and method of fabricating the same'2016 9,000,460'Semiconductor light emitting device'2015 8,866,167'Nitride semiconductor light emitting device and fabrication method thereof'2014 8,733,245'Screen printer'2014 8,716,694'Semiconductor light emitting device'2014 8,525,196'Nitride-based semiconductor light emitting diode'2013 8,440,996'Nitride semiconductor light emitting device and fabrication method thereof'2013 8,415,708'Nitride based semiconductor light-emitting device'2013 8,410,497'Semiconductor light emitting device'2013 8,357,560'Package of MEMS device and method for fabricating the same'2013 8,333,112'Frequency tuning of disc resonator gyroscopes via resonator mass perturbation based on an identified model'2012 8,269,242'Semiconductor light emitting device having surface plasmon layer'2012 8,227,700'Chip having side protection terminal and package using the chip'2012 8,135,968'Semiconductor apparatus including power management integrated circuit'2012 8,129,711'Nitride semiconductor light emitting device and fabrication method thereof'2012 8,030,640'Nitride semiconductor light emitting device and method of manufacturing the same'2011 7,994,525'Nitride-based semiconductor light emitting diode'2011 7,977,134'Nitride-based semiconductor light emitting diode and method of manufacturing the same'2011 7,948,043'MEMS package that includes MEMS device wafer bonded to cap wafer and exposed array pads'2011 7,893,443'Nitride based semiconductor light-emitting device'2011 7,893,447'Nitride-based semiconductor light emitting diode'2011 7,888,670'Nitride semiconductor light emitting device'2011 7,818,159'Intelligent system and method for monitoring generator reactive power limit using machine model parameters'2010 7,811,902'Method for manufacturing nitride based single crystal substrate and method for manufacturing nitride based light emitting diode using the same'2010 RE041653'Method of forming metal wiring of semiconductor device'2010 7,763,881'Photonic crystal light emitting device'2010 7,687,294'Nitride semiconductor device and method of manufacturing the same'2010 7,615,394'Method for fabricating MEMS device package that includes grinding MEMS device wafer to expose array pads corresponding to a cap wafer'2009 7,578,456'Method for preparing micron-sized ginseng powder via mechanical grinding'2009 7,557,441'Package of MEMS device and method for fabricating the same'2009 7,294,864'Flip chip type nitride semiconductor light-emitting diode'2007 7,236,898'System and method for calculating real-time voltage stability risk index in power system using time series data'2007 7,220,675'Method of forming metal wiring of semiconductor device'2007 7,192,884'Method for manufacturing semiconductor laser device'2007 7,187,007'Nitride semiconductor device and method of manufacturing the same'2007 7,173,288'Nitride semiconductor light emitting device having electrostatic discharge (ESD) protection capacity'2007 7,135,716'Gallium nitride-based semiconductor light-emitting device'2006 7,084,420'Nitride based semiconductor device'2006 7,067,401'Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby'2006 7,018,912'Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby'2006 6,912,770'Method for fabricating magnetic field sensor'2005 6,825,124'Method of forming metal line in semiconductor device'2004 6,693,040'Method for cleaning the contact area of a metal line'2004 6,656,841'Method of forming multi layer conductive line in semiconductor device'2003 6,438,998'Ultrasonic dispersion apparatus for silica sol'2002 6,336,075'Apparatus and method for guiding a vehicle'2002 6,334,086'Method and apparatus for collecting traffic information'2001 6,303,404'Method for fabricating white light emitting diode using InGaN phase separation'2001 6,173,149'Transfer roller of an electrophotographic printing apparatus for protecting photoconductive drum from staining and method of manufacturing transfer roller'2001 5,612,768'Image forming apparatus with an air ventilation structure for preventing contamination of charging device'1997 5,158,463'Method of manufacturing both low and high voltage BiCMOS transistors in the same semiconductor substrate'1992 5,105,252'Low voltage BiCMOS and high voltage BiCMOS the same substrate'1992

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1992–2015Patents assigned to SAMSUNG ELECTRONICS CO LTD (15)· patent assignee history

1992–2012Based in Kyungki-do, KR· patent location history

1997–2014Based in Suwon-si, KR· patent location history

2001–2021Based in Seoul, KR· patent location history

2005–2013Based in Chungcheongbuk-do, KR· patent location history

2006–2010Patents assigned to SAMSUNG ELECTRO MECH (10)· patent assignee history

2007–2019Patents assigned to MAGNACHIP SEMICONDUCTOR LTD (8)· patent assignee history

2011–2012Patents assigned to SAMSUNG LED CO LTD (7)· patent assignee history

2012–2013Patents assigned to KIM DONG JOON (6)· patent assignee history

2012–2015Based in Gyeonggi-do, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SAMSUNG ELECTRONICS CO LTD	15	1992–2015
SAMSUNG ELECTRO MECH	10	2006–2010
MAGNACHIP SEMICONDUCTOR LTD	8	2007–2019
SAMSUNG LED CO LTD	7	2011–2012
KIM DONG JOONself	6	2012–2013

Locations

Location	Patents	Span
Seoul, KR	21	2001–2021
Suwon-si, KR	8	1997–2014
Chungcheongbuk-do, KR	5	2005–2013
Kyungki-do, KR	5	1992–2012
Gyeonggi-do, KR	4	2012–2015