Inventor

Koji Hasegawa

Inventor
Joetsu-shi, JP

Overview

228→
Patents
1988–2021
Patent span
Chemistry
Primary field (CPC C)

Patents· 228 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G03Fprimary
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices25%
C08FMacromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds18%
C07CAcyclic or carbocyclic compounds10%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests8%
C07DHeterocyclic compounds7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds4%
C08LCompositions of macromolecular compounds3%
C09DCoating compositions, e.g. paints, varnishes or lacquers3%
H01BCables2%
PatentTitleYear
11,015,974Measurement device202110,851,188Polymer compound for conductive polymer and method for producing same202010,816,900Tetracarboxylic acid diester compound, polymer of polyimide precursor and method for producing same, negative photosensitive resin composition, patterning process, and method for forming cured film202010,800,916Stretchable film composition, stretchable film, and method for forming the same202010,661,238Continuous particle manufacturing device202010,591,819Monomer, polymer, resist composition, and patterning process202010,559,397Conductive polymer composite and substrate202010,527,939Monomer, polymer, resist composition, and patterning process202010,515,735Conductive polymer composite and substrate201910,508,162Polymer compound for conductive polymer and method for producing same201910,457,779Tetracarboxylic acid diester compound, polyimide precursor polymer and method for producing the same, negative photosensitive resin composition, positive photosensitive resin composition, patterning process, and method for forming cured film201910,424,896Laser light source module and method of specifying failure laser diode201910,363,555Polymer compound for conductive polymer and method for producing the same201910,310,376Resist composition, pattern forming process, polymer, and monomer201910,308,735Material for organic light-emitting device and organic light-emitting device including the same201910,303,056Resist composition and patterning process201910,286,514Spindle condition detection device for machine tool201910,216,085Tetracarboxylic acid diester compound, polyimide precursor polymer and method for producing the same, negative photosensitive resin composition, patterning process, and method for forming cured film201910,203,601Tetracarboxylic acid diester compound, polymer of polyimide precursor and method for producing same, negative photosensitive resin composition, patterning process, and method for forming cured film201910,131,730Resist composition and patterning process201810,125,202Polymer compound for a conductive polymer and method for producing same201810,126,649Resist composition and patterning process using the same201810,114,287Silicone skeleton-containing polymer compound and method for producing same, chemically amplified negative resist composition, photo-curable dry film and method for producing same, patterning process, layered product, and substrate201810,025,180Sulfonium compound, resist composition, and patterning process201810,023,674Monomer, polymer, resist composition, and patterning process201810,020,089Conductive polymer composite and substrate201810,012,903Resist composition and pattern forming process201810,005,868Resist composition and patterning process using the same20189,991,019Conductive polymer composite and substrate20189,969,829Polymer compound, negative resist composition, laminate, patterning process, and compound20189,904,172'Shrink material and pattern forming process'2018D0803911'Programmable controller'20179,829,792Monomer, polymer, positive resist composition, and patterning process2017D0803281'Programmable controller'2017D0803280'Programmable controller'20179,810,983'Polymer, chemically amplified positive resist composition and patterning process'20179,790,166'Polymer, monomer, resist composition, and patterning process'20179,793,653'Controller unit'20179,777,093'Polymer compound for a conductive polymer and method for producing same'20179,758,609'Monomer, polymer, resist composition, and patterning process'20179,752,045'Conductive polymer composite and substrate'20179,740,100'Hemiacetal compound, polymer, resist composition, and patterning process'20179,720,324'Resist composition and pattern forming process'20179,709,890'Resist composition and patterning process'20179,663,593'Polymer compound for a conductive polymer and method for producing same'20179,657,115'Polymer compound for a conductive polymer and method for manufacturing same'20179,632,415'Pattern forming process and shrink agent'20179,618,850'Pattern forming process and shrink agent'20179,601,229'Conductive polymer composite comprising a sulfo group-containing dopant polymer'20179,595,362'Conductive polymer composition comprising a sulfo group-containing dopant polymer'20179,587,137'Conductive polymer composite comprising a sulfo group-containing dopant polymer and substrate'20179,551,932'Patterning process and resist composition'20179,535,325'Onium salt, chemically amplified positive resist composition, and patterning process'20179,527,937'Polymer compound for a conductive polymer and method for producing same'20169,493,597'Polymer compound having a specific super strongly acidic sulfo group'20169,482,949'Positive resist composition and patterning process'20169,458,144'Monomer, polymer, resist composition, and patterning process'20169,442,376'Positive resist composition and patterning process'20169,429,843'Positive resist composition and patterning process'20169,411,225'Photo acid generator, chemically amplified resist composition, and patterning process'20169,377,689'Silicone structure-bearing polymer, negative resist composition, photo-curable dry film, patterning process, and electric/electronic part-protecting film'20169,335,633'Positive resist composition and patterning process'20169,335,632'Positive resist composition and patterning process'20169,310,683'Monomer, polymer, positive resist composition and patterning process'20169,266,142'Coating device'20169,261,783'Fluorinated ester monomer, making method, fluorinated ester polymer, and difluorohydroxycarboxylic acid'20169,256,127'Monomer, polymer, resist composition, and patterning process'20169,250,517'Polymer, positive resist composition and patterning process'20169,250,522'Positive resist composition and patterning process'20169,235,122'Monomer, polymer, resist composition, and patterning process'20169,213,235'Patterning process, resist composition, polymer, and monomer'20159,182,668'Patterning process, resist composition, polymer, and monomer'20159,178,426'Three-phase alternating-current power supply switching circuit'20159,140,988'Positive resist composition, monomer, polymer, and patterning process'20159,115,074'Fluorinated monomer, polymer, resist composition, and patterning process'20159,104,105'Patterning process and resist composition'20159,086,624'Monomer, polymer, resist composition, and patterning process'20159,086,628'Resist protective film-forming composition and patterning process'20159,081,290'Patterning process and resist composition'20159,075,308'Positive resist composition and patterning process'20159,046,772'Monomer, polymer, resist composition, and patterning process'20159,040,222'Polymerizable tertiary ester compound, polymer, resist composition, and patterning process'20159,040,223'Resist composition, patterning process and polymer'20159,027,577'Nozzle and a substrate processing apparatus including the same'20159,023,587'Negative resist composition and patterning process'20159,017,918'Monomer, polymer, chemically amplified positive resist composition, and patterning process'20159,017,931'Patterning process and resist composition'20158,999,630'Patterning process and resist composition'20158,945,809'Fluorinated monomer, fluorinated polymer, resist composition, and patterning process'20158,933,251'Fluorinated monomer of cyclic acetal structure, polymer, resist protective coating composition, resist composition, and patterning process'20158,924,172'Power consumption display unit for machine tool'20148,921,025'Positive resist compositions and patterning process'20148,916,331'Resist composition and patterning process'20148,900,793'Polymer, chemically amplified resist composition, and patterning process using said chemically amplified resist composition'20148,877,424'Monomer, polymer, resist composition, and patterning process'20148,865,390'Patterning process and resist composition'20148,841,061'Positive resist composition and patterning process'20148,835,094'Fluoroalcohol, fluorinated monomer, polymer, resist composition and patterning process'20148,808,966'Positive resist composition and patterning process'20148,795,946'Polymerizable ester compound, polymer, resist composition, and patterning process'20148,791,288'Acid-labile ester monomer having spirocyclic structure, polymer, resist composition, and patterning process'20148,791,290'Acetal compound, polymer, resist composition, and patterning process'20148,753,805'Patterning process and resist composition'20148,735,046'Positive resist composition and patterning process'20148,703,408'Patterning process'20148,697,903'Fluorinated ester monomer, making method, fluorinated ester polymer, and difluorohydroxycarboxylic acid'20148,686,166'Preparation of 2,2-bis (fluoroalkyl) oxirane and preparation of photoacid generator therefrom'20148,671,877'Coating apparatus'20148,652,750'Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method'20148,647,808'Fluorinated monomer, polymer, resist composition, and patterning process'20148,597,869'Sulfonium salt, resist composition, and patterning process'20138,574,817'Positive resist composition and patterning process'20138,501,386'Silicon-containing film-forming composition, silicon-containing film-formed substrate, and patterning process'20138,492,078'Patterning process'20138,450,042'Positive resist composition and patterning process'20138,440,386'Patterning process, resist composition, and acetal compound'20138,431,323'Fluorinated monomer of cyclic acetal structure, polymer, resist protective coating composition, resist composition, and patterning process'20138,420,290'Acetal compounds and their preparation, polymers, resist compositions and patterning process'20138,420,292'Polymer, resist composition, and patterning process'20138,361,703'Resist protective coating composition and patterning process'20138,313,886'Resist composition and patterning process'20128,268,528'Resist composition and patterning process'20128,211,618'Positive resist composition and patterning process'20128,158,330'Resist protective coating composition and patterning process'20128,114,570'Photoacid generator, resist composition, and patterning process'20128,101,335'Resist composition and patterning process'20128,062,831'Carboxyl-containing lactone compound, polymer, resist composition, and patterning process'20118,053,165'Hydroxyl-containing monomer, polymer, resist composition, and patterning process'20117,985,528'Positive resist composition and patterning process'20117,981,589'Fluorinated monomer, fluorinated polymer, resist composition and patterning process'20117,875,417'Silicone-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method'20117,871,752'Lactone-containing compound, polymer, resist composition, and patterning process'20117,868,199'Fluoroalcohol preparation method, fluorinated monomer, polymer, resist composition and patterning process'20117,836,842'Coating apparatus'20107,833,694'Lactone-containing compound, polymer, resist composition, and patterning process'2010RE041580'Lactone-containing compounds, polymers, resist compositions, and patterning method'20107,758,717'Wafer treating apparatus'20107,741,015'Patterning process and resist composition'20107,718,342'Polymers, resist compositions and patterning process'20107,687,222'Polymerizable ester compounds, polymers, resist compositions and patterning process'20107,678,530'Lactone-containing compound, polymer, resist composition, and patterning process'20107,670,750'Polymer, resist protective coating material, and patterning process'20107,642,034'Polymer, resist protective coating material, and patterning process'20107,629,106'Resist composition and patterning process using the same'20097,622,242'Resist composition and patterning process'20097,614,359'Coating apparatus'20097,537,880'Polymer, resist composition, and patterning process'20097,531,289'Fluorinated monomer having cyclic structure, manufacturing method, polymer, photoresist composition and patterning process'20097,527,912'Photoacid generators, resist compositions, and patterning process'20097,485,408'Fluorine-containing silicon compounds, silicone resins, resist compositions, and patterning process'20097,392,814'Substrate processing apparatus and method'20087,378,548'Tertiary amine compounds having an ester structure and processes for preparing the same'20087,276,324'Nitrogen-containing organic compound, resist composition and patterning process'20077,267,128'Substrate treating apparatus'20077,266,140'GPS positioning method and GPS reception apparatus'20077,261,995'Nitrogen-containing organic compound, chemically amplified resist composition and patterning process'20077,243,911'Substrate treating apparatus'20077,192,684'Polymerizable silicon-containing compound, manufacturing method, polymer, resist composition and patterning process'20077,169,541'Compound, polymer, resist composition, and patterning process'20077,160,416'Substrate treating apparatus'20077,141,351'Basic compound, resist composition and patterning process'20067,141,352'Basic compound, resist composition and patterning process'20067,135,270'Resist polymer, resist composition and patterning process'20067,132,215'Ester compounds, polymers, resist compositions and patterning process'20067,109,828'Surface acoustic wave device, and mobile communication device and sensor both using same'20067,084,303'Tertiary amine compounds having an ester structure and processes for preparing same'20067,075,390'Surface acoustic wave device'20067,037,995'Tertiary (meth)acrylates having lactone structure, polymers, resist compositions and patterning process'20067,029,822'Tertiary alcohol compounds having alicyclic structure'20066,962,767'Acetal compound, polymer, resist composition and patterning process'20056,899,990'Epoxy compound having alicyclic structure, polymer, resist composition and patterning process'20056,844,133'Polymer, resist composition and patterning process'20056,794,111'Polymers, resist compositions and patterning process, novel tetrahydrofuran compounds and their preparation'20046,780,563'Polymer, resist composition and patterning process'20046,774,258'Tertiary alcohol compounds having alicyclic structure'20046,746,818'(Meth)acrylates having lactone structure, polymers, photoresist compositions and patterning process'20046,743,566'Cyclic acetal compound, polymer, resist composition and patterning process'20046,713,612'Sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process'20046,703,183'Polymer, resist composition and patterning process'20046,677,101'Polymers, resist materials, and pattern formation method'20046,673,518'Polymer, resist composition and patterning process'20046,673,515'Polymer, resist composition and patterning process'20046,670,498'Ester compounds, polymers, resist compositions and patterning process'20036,667,145'Resist composition and patterning process'20036,660,448'Polymer, resist composition and patterning process'20036,624,112'Hydrogenolysis catalyst'20036,596,463'Ester compounds, polymers, resist compositions and patterning process'20036,589,911'Weeding method with sodium hydrogen carbonate'20036,586,157'Ester compounds, polymers, resist compositions and patterning process'20036,566,038'Polymers, resist compositions and patterning process'20036,566,037'Polymer, resist composition and patterning process'20036,531,627'Ester compounds, polymers, resist compositions and patterning process'20036,524,765'Polymer, resist composition and patterning process'20036,515,149'Acetal compound, polymer, resist composition and patterning response'20036,515,150'Cyclic acetal compound, polymer, resist composition and patterning process'20036,509,135'Polymer, resist composition and patterning process'20036,509,481'Tetrahydrofuran compounds having alicyclic structure'20036,500,971'Ester compounds having alicyclic and oxirane structures and method for preparing the same'20026,500,961'Lactone compounds having alicyclic structure and their manufacturing method'20026,492,089'Polymer, resist composition and patterning process'20026,492,090'Polymers, resist compositions and patterning process'20026,480,145'GPS receiver and GPS position measurement method'20026,470,726'Method for manufacturing an extruded article changing in cross-section and an apparatus for extruding said extruded article'20026,472,543'Lactone compounds having alicyclic structure and their manufacturing method'20026,469,220'Tertiary alcohol compounds having an alicyclic structure'20026,466,163'GPS receiver and portable communication apparatus'20026,448,420'Acid-decomposable ester compound suitable for use in resist material'20026,445,341'GPS receiver and GPS reception method'20026,444,396'Ester compounds, polymers, resist composition and patterning process'20026,413,695'Resist compositions and patterning process'20026,403,823'Ester compounds having alicyclic structure and method for preparing same'20026,403,822'Ester compounds having alicyclic structure and method for preparing same'20026,399,274'Resist composition and patterning process'20026,337,415'Process for preparing tetrakis (trimethylsily) silane and tris (trimethysilyl) silane'20026,312,867'Ester compounds, polymers, resist compositions and patterning process'20016,291,696'Preparation of tris (trimethylsilyl) silylethyl esters'20016,284,429'Ester compounds, polymers, resist compositions and patterning process'20016,280,898'Lactone-containing compounds, polymers, resist compositions, and patterning method'20016,147,249'Ester compounds, polymers, resist composition and patterning process'20006,138,695'Substrate processing apparatus'20005,871,169'Photographic film with retainer portion cut along perforation edge'19995,730,901'Silacyclohexane compounds, preparation thereof liquid crystal compositions comprising the same, and liquid crystal devices comprising the composition'19985,591,697'Physiologically active substances of plant, process for the preparation thereof, and utilities thereof'19975,559,563'Waveform response improvement circuit'19965,512,673'Physiologically active substances of plant, process for the preparation thereof, and utilities thereof'19965,455,345'Physiologically active substances of plant, process for the preparation thereof, and utilities thereof'19955,367,230'Cathode-ray tube with convergence yoke lens systems'19944,757,007'Process for preparing hydrolyzed products of soy protein'1988

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1994–2019Based in Kanagawa, JP· patent location history
1998–2020Patents assigned to SHINETSU CHEMICAL CO (187)· patent assignee history
1998–2009Based in Niigata, JP· patent location history
2001–2006Based in Nishikamo-gun, JP· patent location history
2007–2020Based in Joetsu-shi, JP· patent location history
2011–2019Patents assigned to HASEGAWA KOJI (43)· patent assignee history
2011–2014Patents assigned to KINSHO TAKESHI (9)· patent assignee history
2012–2015Patents assigned to HATAKEYAMA JUN (20)· patent assignee history
2012–2015Patents assigned to HARADA YUJI (11)· patent assignee history
2013–2020Based in Jyoetsu, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SHINETSU CHEMICAL CO1871998–2020
HASEGAWA KOJIself432011–2019
HATAKEYAMA JUN202012–2015
HARADA YUJI112012–2015
KINSHO TAKESHI92011–2014
Locations
LocationPatentsSpan
Joetsu-shi, JP1062007–2020
Nishikamo-gun, JP282001–2006
Niigata, JP271998–2009
Jyoetsu, JP262013–2020
Kanagawa, JP71994–2019