Inventor
Dian Sugiarto
Inventor
Sunnyvale, CA, US
Overview
Patents· 25 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1029%
C23CCoating metallic material26%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests12%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices5%
H01JElectric discharge tubes or discharge lamps4%
Y10TTechnical subjects covered by former us classification4%
B05DProcesses for applying fluent materials to surfaces, in general3%
PatentTitleYear
7,745,328'Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)'20107,465,659'Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)'20087,459,404'Adhesion improvement for low k dielectrics'20087,157,384'Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)'20077,153,787'CVD plasma assisted lower dielectric constant SICOH film'20067,117,064'Method of depositing dielectric films'20067,030,041'Adhesion improvement for low k dielectrics'20067,008,484'Method and apparatus for deposition of low dielectric constant materials'20067,001,850'Method of depositing dielectric films'20066,943,127'CVD plasma assisted lower dielectric constant SICOH film'20056,911,403'Methods of reducing plasma-induced damage for advanced plasma CVD dielectrics'20056,838,393'Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide'20056,825,562'Damascene structure fabricated using a layer of silicon-based photoresist material'20046,764,958'Method of depositing dielectric films'20046,632,735'Method of depositing low dielectric constant carbon doped silicon oxide'20036,589,715'Process for depositing and developing a plasma polymerized organosilicon photoresist film'20036,514,857'Damascene structure fabricated using a layer of silicon-based photoresist material'20036,486,082'CVD plasma assisted lower dielectric constant sicoh film'20026,395,092'Apparatus for depositing high deposition rate halogen-doped silicon oxide layer'20026,258,735'Method for using bypass lines to stabilize gas flow and maintain plasma inside a deposition chamber'20016,238,844'Process for depositing a plasma polymerized organosilicon photoresist film'20016,204,168'Damascene structure fabricated using a layer of silicon-based photoresist material'20016,090,530'Method and apparatus for depositing deep UV photoresist films'20006,077,764'Process for depositing high deposition rate halogen-doped silicon oxide layer'20005,885,751'Method and apparatus for depositing deep UV photoresist films'1999Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1999–2010Patents assigned to APPLIED MATERIALS INC (25)· patent assignee history
1999–2004Based in Union City, CA, US· patent location history
2001–2010Based in Sunnyvale, CA, US· patent location history
2003Patents assigned to FRANCE TELECOM (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 25 | 1999–2010 |
| FRANCE TELECOM | 1 | 2003 |
Locations
| Location | Patents | Span |
|---|---|---|
| Sunnyvale, California, US | 16 | 2001–2010 |
| Union City, California, US | 9 | 1999–2004 |