Inventor
Mitsuyuki Niwa
Inventor
Nagahama, JP
Overview
18→
Patents
1991–2021
Patent span
General tagging of new technological developments
Primary field (CPC Y)
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Fprimary
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation24%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution24%
Y02PClimate change mitigation technologies in the production or processing of goods21%
H10DInorganic electric semiconductor devices8%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
C23CCoating metallic material3%
G03GElectrography3%
A63FCard, board, or roulette games2%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds2%
C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients2%
PatentTitleYear
11,033,812Input apparatus, method, and game processing method20215,578,501'Method of manufacturing a solar cell by formation of a zinc oxide transparent conductive layer'19965,573,601'Pin amorphous silicon photovoltaic element with counter-doped intermediate layer'19965,563,425'Photoelectrical conversion device and generating system using the same'19965,563,075'Forming a non-monocrystalline silicone semiconductor having pin junction including laminated intrinsic layers'19965,527,396'Deposited film forming apparatus'19965,429,685'Photoelectric conversion element and power generation system using the same'19955,420,043'Method of manufacturing a solar cell'19955,417,770'Photovoltaic device and a forming method thereof'19955,418,680'Apparatus for repairing an electrically short-circuited semiconductor device'19955,371,380'Si- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1.times.10.sup.(19) (cm.sup.-3) or less'19945,352,300'Solar cell'19945,324,365'Solar cell'19945,284,525'Solar cell'19945,281,541'Method for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said method'19945,244,509'Substrate having an uneven surface for solar cell and a solar cell provided with said substrate'19935,236,798'Electrophotographic light receiving member having a photoconductive layer formed of non-single crystal silicon material and a surface layer containing polysilane compound'19935,019,887'Non-single crystalline photosensor with hydrogen and halogen'1991Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1991–1996Patents assigned to CANON KK (17)· patent assignee history
1991–1996Based in Nagahama, JP· patent location history
1995–1996Based in Nara, JP· patent location history
2021Patents assigned to NINTENDO CO LTD (1)· patent assignee history
2021Based in Kyoto, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CANON KK | 17 | 1991–1996 |
| NINTENDO CO LTD | 1 | 2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Nagahama, JP | 14 | 1991–1996 |
| Nara, JP | 3 | 1995–1996 |
| Kyoto, JP | 1 | 2021 |