Inventor
Masatomo Shibata
Inventor
Tokyo, JP
Overview
Patents· 32 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth29%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1026%
H10HInorganic light-emitting semiconductor devices having potential barriers11%
H10DInorganic electric semiconductor devices9%
H01LSemiconductor devices6%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
C23CCoating metallic material3%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light3%
A63BApparatus for physical training, gymnastics, swimming, climbing, or fencing2%
B28DWorking stone or stone-like materials2%
PatentTitleYear
10,584,031Nitride crystal substrate202010,309,036Method for manufacturing group-III nitride semiconductor crystal substrate201910,290,489Method for manufacturing group-III nitride substrate and group-III nitride substrate201910,266,965Method for producing group-III nitride crystal, group-III nitride crystal, semiconductor device, and device for producing group-III nitride crystal201910,260,165Method for manufacturing nitride crystal substrate and substrate for crystal growth201910,253,432Semiconductor substrate manufacturing method201910,100,434Nitride semiconductor single crystal substrate manufacturing method20188,207,054'Group III nitride semiconductor substrate, substrate for group III nitride semiconductor device, and methods of making same'20128,101,939'GaN single-crystal substrate and method for producing GaN single crystal'20127,981,713'Group III-V nitride-based semiconductor substrate, group III-V nitride-based device and method of fabricating the same'20117,935,615'III-V nitride semiconductor substrate and its production method'20117,847,313'Group III-V nitride-based semiconductor substrate and group III-V nitride-based light emitting device'20107,829,913'Porous substrate and its manufacturing method, and gan semiconductor multilayer substrate and its manufacturing method'20107,790,489'III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer'20107,674,699'III group nitride semiconductor substrate, substrate for group III nitride semiconductor device, and fabrication methods thereof'20107,622,791'III-V group nitride system semiconductor substrate'20097,435,608'III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer'20087,288,830'III-V nitride semiconductor substrate and its production method'20077,276,779'III-V group nitride system semiconductor substrate'20077,271,404'Group III-V nitride-based semiconductor substrate and method of making same'20077,253,499'III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer'20077,230,282'III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer'20077,196,399'Epitaxially grown nitride-based compound semiconductor crystal substrate structure with low dislocation density'20077,189,588'Group III nitride semiconductor substrate and its manufacturing method'20077,118,934'Porous substrate for epitaxial growth, method for manufacturing same, and method for manufacturing III-nitride semiconductor substrate'20067,097,920'Group III nitride based semiconductor substrate and process for manufacture thereof'20067,057,204'III-V group nitride system semiconductor substrate'20067,045,808'III-V nitride semiconductor substrate and its production lot, and III-V nitride semiconductor device and its production method'20066,924,159'Semiconductor substrate made of group III nitride, and process for manufacture thereof'20056,824,610'Process for producing gallium nitride crystal substrate, and gallium nitride crystal substrate'20046,812,051'Method of forming an epitaxially grown nitride-based compound semiconductor crystal substrate structure and the same substrate structure'20046,270,569'Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2012Patents assigned to HITACHI CABLE (25)· patent assignee history
2001–2012Based in Tsuchiura, JP· patent location history
2004–2010Patents assigned to NEC CORP (3)· patent assignee history
2004–2019Based in Tokyo, JP· patent location history
2005–2020Based in Ibaraki, JP· patent location history
2018–2020Patents assigned to SUMITOMO CHEMICAL CO (6)· patent assignee history
2018–2019Based in Hitachi, JP· patent location history
2019–2020Patents assigned to SCIOCS CO LTD (3)· patent assignee history
2019Patents assigned to UNIV OSAKA (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HITACHI CABLE | 25 | 2001–2012 |
| SUMITOMO CHEMICAL CO | 6 | 2018–2020 |
| NEC CORP | 3 | 2004–2010 |
| SCIOCS CO LTD | 3 | 2019–2020 |
| UNIV OSAKA | 3 | 2019 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 12 | 2004–2019 |
| Tsuchiura, JP | 11 | 2001–2012 |
| Hitachi, JP | 5 | 2018–2019 |
| Ibaraki, JP | 4 | 2005–2020 |